MMBT2907A

更新时间： 2024-09-13 10:52:39

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管光电二极管
页数	文件大小	规格书
4页	230K
描述
PNP General Purpose Amplifier

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中文翻译

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数据手册

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MMBT2907A 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT2907A

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Capable of 350mWatts of Pd, 600mA continuous collector current.

•

PNP General

Purpose Amplifier

xꢀ Operating and Storage Junction Temperatures: -55ć to 150ć

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Pin Configuration

Top View

Marking : 2F

•

Thermal Tesistance,Junction to Ambient:500^oC/W

SOT-23

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_BL

Collector-Emitter Breakdown Voltage*

(I_C=10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=10µAdc, I_C=0)

Base Cutoff Current

Vdc

5.0

Vdc

nAdc

(V_CE=30Vdc, V_BE=0.5Vdc)

Collector Cutoff Current

(V_CE=30Vdc, V_BE=0.5Vdc)

Collector Cutoff Current

(V_CB=50Vdc, I_E=0)

I_CEX

I_CBO

0.1

10.0

µAdc

DIMENSIONS

(V_CB=50Vdc, I_E=0, T_A=150°C)

ON CHARACTERISTICS

INCHES

MIN

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

h_FE

DC Current Gain*

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

(I_C=0.1mAdc, V_CE=10Vdc)

(I_C=1.0mAdc, V_CE=10Vdc)

(I_C=10mAdc, V_CE=10Vdc)

100

(I_C=150mAdc, V_CE=10Vdc)

(I_C=500mAdc, V_CE=10Vdc)

Collector-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

300

V_CE(sat)

0.4

1.6

Vdc

.085

.37

V_BE(sat)

Suggested Solder

Pad Layout

1.3

2.6

SMALL-SIGNAL CHARACTERISTICS

.031

.800

f_T

Current Gain-Bandwidth Product

(I_C=50mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=10Vdc, I_E=0, f=1.0MHz)

Input Capacitance

200

MHz

.035

.900

C_cbo

C_ibo

8.0

.079

2.000

inches

(V_EB=2.0Vdc, I_C=0, f=1.0MHz)

30.0

SWITCHING CHARACTERISTICS

t_d

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=3.0Vdc, I_C=150mAdc,

.037

.950

t_r

I_B1=15mAdc)

.037

.950

t_s

t_f

(V_CC=3.0Vdc, I_C=150mAdc

I_B1=I_B2=15mAdc)

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

www.mccsemi.com

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Revision: A

2011/01/01

12 3 4

中文翻译

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与MMBT2907A相关器件

型号	品牌	获取价格	描述	数据表
MMBT2907A/D87Z	TI	获取价格	800mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2907A/E9	VISHAY	获取价格	Transistor
MMBT2907A/L99Z	TI	获取价格	800mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2907A_08	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907A_09	UTC	获取价格	PNP GENERAL PURPOSE AMPLIFIER
MMBT2907A_1	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907A_10	MCC	获取价格	NPN General Purpose Amplifier
MMBT2907A_11	MCC	获取价格	PNP General Purpose Amplifier
MMBT2907A_16	DIODES	获取价格	60V PNP SMALL SIGNAL TRANSISTOR
MMBT2907A_D87Z	FAIRCHILD	获取价格	PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

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