WILLAS
MMBT2907ADW1T1
Transistor
Dual General Purpose
Featrues
We declare that the material of product compliance with RoHS requirements.
Pb-Free package is available
z
z
6
5
4
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
1
2
3
MAXIMUM RATINGS
Value
SOT-363
Rating
Symbol
V CEO
2907 2907A
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
–40
–60
V CBO
–60
–5.0
–600
Vdc
(3)
Q
(2)
(1)
V
Vdc
EBO
I C
mAdc
1
THERMAL CHARACTERISTICS
Characteristic
Q
2
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
(4)
(5)
(6)
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
ORDERING INFORMATION
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
Marking
Device
Shipping
TJ , Tstg
–55 to +150
M MBT2907ADW1T1
2F
3000 Units/Reel
DEVICE MARKING
MMBT2907ADW1T1
= 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = –10 mAdc, I B = 0)
V (BR)CEO
Vdc
M MBT2907
–40
–60
–60
–5.0
—
—
—
M MBT2907A
Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0)
Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc)
Collector Cutoff Current
V (BR)CBO
V (BR)EBO
I CEX
—
Vdc
—
Vdc
nAdc
µAdc
–50
I CBO
( V CB = –50Vdc, I E = 0)
M MBT2907
—
—
–0.020
–0.010
M MBT2907A
( V CB = –50Vdc, I E = 0, T A =125°C )
M MBT2907
—
—
—
–20
–10
–50
M MBT2907A
Base Current( V CE = –30Vdc, V EB(off)= –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
I B
nAdc
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
2012-10
WILLAS ELECTRONIC CORP.