Datasheet > MMBT2907ALT1

MMBT2907ALT1

更新时间： 2024-11-18 04:39:27

品牌	Logo	应用领域
AVICTEK		晶体晶体管光电二极管
页数	文件大小	规格书
1页	41K
描述
SOT-23 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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MMBT2907ALT1 数据手册

@vic

MMBT2907ALT1

SOT-23 Plastic-Encapsulate Transistors

SOT-23

1. BASE

MMBT2907ALT1

TRANSISTOR (PNP)

2. EMITTER

3. COLLECTOR

FEATURES

Power dissipation

P_CM:

0.3 W (Tamb=25℃)

2. 4

1. 3

Collector current

I_CM:

-0.6

Collector-base voltage

V_(BR)CBO

-60

Operating and storage junction temperature range

Unit: mm

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic= -10µA , I_E=0

MIN

-60

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -10 mA , I_B=0

I_E= -10µA, I_C=0

V_CB= -50V, I_E=0

-0.1

300

µA

Collector cut-off current

I_CEO

V_CB= -3V, I_B=0

Emitter cut-off current

I_EBO

V_EB= -3V, I_C=0

h_FE(1)

V_CE=-10V, I_C= -150mA

V_CE=-10V, I_C= -1mA

I_C=-500mA, I_B=-50 mA

I_C= -500mA, I_B=-50 mA

100

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-1

-2

V_CE=-20V, I_C= -50mA

Transition frequency

200

MHz

f_T

f = 100MHz

DEVICE MARKING:

MMBT2907ALT1 =2F

Website http://www.avictek.com

中文翻译

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