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MMBT2907AT-7-F PDF预览

MMBT2907AT-7-F

更新时间: 2024-01-18 02:42:19
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 346K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT2907AT-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.72最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
最大开启时间(吨):45 nsBase Number Matches:1

MMBT2907AT-7-F 数据手册

 浏览型号MMBT2907AT-7-F的Datasheet PDF文件第2页浏览型号MMBT2907AT-7-F的Datasheet PDF文件第3页浏览型号MMBT2907AT-7-F的Datasheet PDF文件第4页 
SPICE MODELS: MMBT2907AT  
MMBT2907AT  
Lead-free  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
Epitaxial Planar Die Construction  
SOT-523  
C
Complementary NPN Type Available (MMBT2222AT)  
Ultra-Small Surface Mount Package  
Dim Min Max Typ  
TOP VIEW  
C
B
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
0.50  
Lead Free/RoHS Compliant (Note 2)  
B
E
G
H
Mechanical Data  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
Case: SOT-523  
K
M
N
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
L
D
Moisture Sensitivity: Level 1 per J-STD-020C  
K
L
Terminals: Solderable per MIL-STD-202, Method 208  
C
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
M
N
α
Terminal Connections: See Diagram  
Marking (See Page 2): 2F  
0°  
8°  
E
B
All Dimensions in mm  
Ordering & Date Code Information, See Page 4  
Weight: 0.002 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-60  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-60  
V
Emitter-Base Voltage  
-5.0  
-600  
150  
833  
V
Collector Current - Continuous  
Power Dissipation (Note 1)  
mA  
mW  
°C/W  
°C  
Pd  
RθJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
Tj, TSTG  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30269 Rev. 7 - 2  
1 of 4  
MMBT2907AT  
www.diodes.com  
Diodes Incorporated  

MMBT2907AT-7-F 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2907AT-7 DIODES

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