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MMBT2907AM3T5G PDF预览

MMBT2907AM3T5G

更新时间: 2024-09-26 10:52:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管PC
页数 文件大小 规格书
6页 167K
描述
PNP General Purpose Transistor

MMBT2907AM3T5G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:8 weeks风险等级:1.19
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:727304Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT PNPSamacsys Package Category:Other
Samacsys Footprint Name:SOT?723 CASE 631AA?01 ISSUE D_1Samacsys Released Date:2018-09-30 12:36:16
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.64 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):100 ns最大开启时间(吨):45 ns
Base Number Matches:1

MMBT2907AM3T5G 数据手册

 浏览型号MMBT2907AM3T5G的Datasheet PDF文件第2页浏览型号MMBT2907AM3T5G的Datasheet PDF文件第3页浏览型号MMBT2907AM3T5G的Datasheet PDF文件第4页浏览型号MMBT2907AM3T5G的Datasheet PDF文件第5页浏览型号MMBT2907AM3T5G的Datasheet PDF文件第6页 
MMBT2907AM3T5G  
PNP General Purpose  
Transistor  
The MMBT2907AM3T5G device is a spinoff of our popular  
SOT23 threeleaded device. It is designed for general purpose  
amplifier applications and is housed in the SOT723 surface mount  
package. This device is ideal for lowpower surface mount  
applications where board space is at a premium.  
http://onsemi.com  
Features  
COLLECTOR  
3
Reduces Board Space  
This is a HalideFree Device  
This is a PbFree Device  
1
BASE  
MAXIMUM RATINGS  
2
EMITTER  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol Value  
Unit  
Vdc  
V
CEO  
V
CBO  
60  
60  
Vdc  
V
5.0  
600  
Vdc  
EBO  
MARKING  
DIAGRAM  
Collector Current Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
3
SOT723  
CASE 631AA  
STYLE 1  
AC M  
Symbol  
Max  
Unit  
2
Total Device Dissipation  
P
D
mW  
1
265  
2.1  
FR5 Board (Note 1)  
AC  
M
= Specific Device Code  
= Date Code  
mW/°C  
T = 25°C  
A
Derate above 25°C  
Thermal Resistance,  
R
JA  
470  
°C/W  
JunctiontoAmbient  
Total Device Dissipation  
Alumina Substrate, (Note 2) T = 25°C  
Derate above 25°C  
P
640  
5.1  
mW  
mW/°C  
°C/W  
D
ORDERING INFORMATION  
A
Device  
Package  
Shipping  
Thermal Resistance,  
JunctiontoAmbient  
R
195  
JA  
MMBT2907AM3T5G SOT723 8000/Tape & Reel  
(PbFree)  
Junction and Storage Temperature  
T , T  
55 to  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
+150  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
January, 2009 Rev. 0  
MMBT2907AM3/D  
 

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