MMBT2907AT

更新时间： 2024-11-18 10:52:39

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管光电二极管
页数	文件大小	规格书
3页	206K
描述
PNP General Purpose Amplifier

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MMBT2907AT 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT2907AT

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

PNP General

Purpose Amplifier

xꢀ Capable of 150mWatts of Power Dissipation

xꢀ Operating and Storage Junction Temperatures -55ć to 150ć

xꢀ Collector Current: -0.6A

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking:2F

SOT-523

Electrical Characteristics @ 25qC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage*

(I_C=-10mAdc, I_B=0)

-60

-5.0

Vdc

Collector-Base Breakdown Voltage

(I_C=-10PAdc, I_E=0)

Emitter-Base Breakdown Voltage

Vdc

(I_E=-10PAdc, I_C=0)

Collector Cut-off Current

(V_CB=-50Vdc, I_E=0)

-10

nAdc

I_EBO

Emitter Cut-off Current

(V_EB=-4Vdc, I_C=0)

ON CHARACTERISTICS

h_FE

DC Current Gain*

DIMENSIONS

INCHES

(I_C=-0.1mAdc, V_CE=-10Vdc)

(I_C=-1.0mAdc, V_CE=-10Vdc)

(I_C=-10mAdc, V_CE=-10Vdc)

(I_C=-150mAdc, V_CE=-10Vdc)

(I_C=-500mAdc, V_CE=-10Vdc)

Collector-Emitter Saturation Voltage

(I_C=-150mAdc, I_B=-15mAdc)

(I_C=-500mAdc, I_B=-50mAdc)

Base-Emitter Saturation Voltage

(I_C=-150mAdc, I_B=-15mAdc)

(I_C=-500mAdc, I_B=-50mAdc)

100

DIM

MIN

.059

.030

.057

MAX

.067

.033

.069

MIN

1.50

0.75

1.45

MAX

1.70

0.85

1.75

NOTE

300

V_CE(sat)

.020 Nominal

0.50Nominal

0.90

.000

.70

.100

.25

-0.4

-1.6

Vdc

.035

.043

.004

.031

.008

.014

1.10

.000

.028

.004

.010

.100

0.80

.200

.35

V_BE(sat)

-1.3

-2.6

SMALL-SIGNAL CHARACTERISTICS

f_T

Current Gain-Bandwidth Product

(I_C=-2mAdc, V_CE=-12Vdc, f=30MHz)

Output Capacitance

(V_CB=-12Vdc, I_E=0, f=100kHz)

140(Typ.)

MHz

C_cbo

5.0

SWITCHING CHARACTERISTICS

T_on

Turn-on Time

Delay Time

Rise Time

(V_CC=-30Vdc, I_C=-150mAdc,

I_B1=-15mAdc)

t_d

t_r

t_off

t_s

Turn-off Time

Storage Time

Fall Time

100

(V_CC=-6Vdc, I_C=-150mAdc

_B1=I_B2=-15mAdc)

t_f

www.mccsemi.com

Revision: A

2011/01/01

1 of 3

12 3

中文翻译

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MMBT2907AT 替代型号

型号	品牌	替代类型	描述	数据表
MMBT2907AT-TP	MCC	功能相似	NPN General Purpose Amplifier
MMBT2907AT-7	DIODES	功能相似	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907AT-7-F	DIODES	功能相似	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

与MMBT2907AT相关器件

型号	品牌	获取价格	描述	数据表
MMBT2907A-T	RECTRON	获取价格	Transistor
MMBT2907AT_1	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907AT_11	MCC	获取价格	PNP General Purpose Amplifier
MMBT2907AT_15	WINNERJOIN	获取价格	PNP TRANSISTOR
MMBT2907AT_2	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907AT-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA S
MMBT2907AT-7	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907AT-7-F	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907AT-G	WEITRON	获取价格	Transistor
MMBT2907A-TP	MCC	获取价格	NPN General Purpose Amplifier

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