5秒后页面跳转
MMBT2907AT_2 PDF预览

MMBT2907AT_2

更新时间: 2024-11-18 10:52:31
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 181K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT2907AT_2 数据手册

 浏览型号MMBT2907AT_2的Datasheet PDF文件第2页浏览型号MMBT2907AT_2的Datasheet PDF文件第3页浏览型号MMBT2907AT_2的Datasheet PDF文件第4页 
MMBT2907AT  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
Epitaxial Planar Die Construction  
Complementary NPN Type Available (MMBT2222AT)  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Note 3 and 4)  
SOT-523  
C
Dim Min Max Typ  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
TOP VIEW  
C
B
E
B
G
H
Mechanical Data  
0.50  
Case: SOT-523  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
Terminal Connections: See Diagram  
Marking Information: 2F, See Page 4  
Ordering & Date Code Information: See Page 4  
Weight: 0.002 grams (approximate)  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
K
J
M
N
L
D
K
L
C
M
N
α
0°  
8°  
E
B
All Dimensions in mm  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-60  
Unit  
V
Collector-Emitter Voltage  
-60  
V
Emitter-Base Voltage  
-5.0  
-600  
150  
833  
V
Collector Current - Continuous  
mA  
mW  
°C/W  
Power Dissipation  
(Note 1)  
(Note 1)  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
°C  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
MMBT2907AT  
© Diodes Incorporated  
DS30269 Rev. 8 - 2  
1 of 4  
www.diodes.com  

与MMBT2907AT_2相关器件

型号 品牌 获取价格 描述 数据表
MMBT2907AT-13 DIODES

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA S
MMBT2907AT-7 DIODES

获取价格

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907AT-7-F DIODES

获取价格

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2907AT-G WEITRON

获取价格

Transistor
MMBT2907A-TP MCC

获取价格

NPN General Purpose Amplifier
MMBT2907A-TP-HF MCC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
MMBT2907AT-T MCC

获取价格

Transistor
MMBT2907AT-TP MCC

获取价格

NPN General Purpose Amplifier
MMBT2907AW KEXIN

获取价格

General Purpose Transistor
MMBT2907AW SEMTECH

获取价格

PNP Silicon Epitaxial Planar Medium Power Transistor