MMBT2907AW

更新时间： 2024-11-18 04:39:27

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
6页	290K
描述
PNP General Purpose Transistors

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中文翻译

获取价格

数据手册

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MMBT2907AW 数据手册

MMBT2907AW

COLLECTOR

PNP General Purpose Transistors

BASE

EMITTER

SOT-323(SC-70)

MAXIMUM RATINGS

Value

-60

-5.0

-600

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Symbol

Unit

Vdc

mAdc

CEO

CBO

EBO

Collector Current-Continuous

THERMAL CHARACTERISTICS

Symbol

Characteristics

Unit

Max

Total Device Dissipation FR-5 Board (1)

TA=25 C

150

833

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

C/W

-55 to +150

J,Tstg

DEVICE MARKING

MMBT2907AW=20

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Unit

Max

Min

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (I = -10 mAdc, I =0)⁽²⁾

Vdc

nAdc

-60

(BR)CEO

(BR)CBO

(BR)EBO

Collector-Base Breakdown Voltage (I = -10 µAdc, I =0)

Emitter-Base Breakdown Voltage (I = -10 µAdc, I =0)

-5.0

Collector Cutoff Current (V = -30 Vdc, V

= -0.5Vdc)

EB (0ff)

-50

CEX

Collector Cutoff Current

-0.010

-10

(V = -50 Vdc, I =0)

CBO

nAdc

(V = -50Vdc, I =0, T =125 C)

Base Cutoff Current (V = -30Vdc, V

= -0.5Vdc)

EB(off)

-50

1.FR-5=1.0 x 0.75 x 0.062 in

2. Pulse Test:Pulse Width=300 us, Duty Cycle 2.0%

WEITRON

http://www.weitron.com.tw

12 3 4 5 6

中文翻译

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