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MMBT2907LT1 PDF预览

MMBT2907LT1

更新时间: 2024-09-23 03:09:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
6页 121K
描述
General Purpose Transistors

MMBT2907LT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.02
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):75JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
最大开启时间(吨):45 nsBase Number Matches:1

MMBT2907LT1 数据手册

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MMBT2907ALT1  
General Purpose  
Transisters  
PNP Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
1
Symbol  
2907A  
−60  
Unit  
Vdc  
BASE  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current − Continuous  
V
CEO  
V
CBO  
V
EBO  
−60  
Vdc  
2
EMITTER  
−5.0  
−600  
Vdc  
I
C
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
MARKING  
DIAGRAM  
3
1
THERMAL CHARACTERISTICS  
2
2F M  
Characteristic  
Symbol  
Max  
Unit  
SOT−23 (TO−236AB)  
CASE 318  
Total Device Dissipation  
FR5 Board (Note 1)  
P
D
STYLE 6  
225  
1.8  
mW  
mW/°C  
°C/W  
2F  
M
= Device Code  
= Month Code  
T = 25°C  
A
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
q
JA  
ORDERING INFORMATION  
Total Device Dissipation  
Alumina Substrate, (Note 2) T = 25°C  
Derate above 25°C  
P
300  
2.4  
mW  
mW/°C  
°C/W  
D
Device  
Package  
Shipping  
A
MMBT2907ALT1  
SOT−23  
3000 Units/Reel  
3000 Units/Reel  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
q
JA  
MMBT2907ALT1G  
SOT−23  
(Pb−Free)  
Junction and Storage Temperature  
T , T  
55 to  
+150  
°C  
J
stg  
MMBT2907ALT3  
SOT−23  
3000 Units/Reel  
3000 Units/Reel  
MMBT2907ALT3G  
SOT−23  
(Pb−Free)  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
December, 2004 − Rev. 4  
MMBT2907ALT1/D  
 

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