Datasheet > MMBT2907AT-G

MMBT2907AT-G

更新时间： 2024-11-18 20:37:07

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
5页	112K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MMBT2907AT-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MMBT2907AT-G 数据手册

MMBT2907AT

COLLECTOR

PNP General Purpose Transistors

* “G” Lead(Pb)-Free

BASE

SOT-523(SC-75)

EMITTER

MAXIMUM RATINGS

Value

-60

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Unit

Vdc

CEO

CBO

-5.0

-600

Emitter-Base Voltage

Collector Current-Continuous

Vdc

mAdc

EBO

THERMAL CHARACTERISTICS

Symbol

Characteristics

Unit

Max

Total Device Dissipation FR-5 Board ⁽¹⁾

TA=25 C

150

833

Thermal Resistance, Junction to Ambient

Junction and Storage,Temperature

C/W

-55 to +150

J,Tstg

DEVICE MARKING

MMBT2907AT=2F

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Unit

Max

Min

OFF CHARACTERISTICS

(2)

Collector-Emitter Breakdown Voltage (I = -10 mAdc, I =0)

Vdc

-60

(BR)CEO

Collector-Base Breakdown Voltage (I = -10 µAdc, I =0)

(BR)CBO

Emitter-Base Breakdown Voltage (I = -10 µAdc, I =0)

(BR)EBO

-5.0

(V = -50 Vdc, I =0)

Collector Cutoff Current

CBO

-10

nAdc

(V = -4 Vdc, I =0)

Emitter Cutoff Current EB

EBO

1.FR-5=1.0 x 0.75 x 0.062 in

2. Pulse Test:Pulse Width=300 us, Duty Cycle 2.0%

WEITRON

http://www.weitron.com.tw

12 3 4 5

中文翻译

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