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MMBT2907AT_11 PDF预览

MMBT2907AT_11

更新时间: 2024-11-18 10:52:31
品牌 Logo 应用领域
美微科 - MCC 放大器
页数 文件大小 规格书
3页 206K
描述
PNP General Purpose Amplifier

MMBT2907AT_11 数据手册

 浏览型号MMBT2907AT_11的Datasheet PDF文件第2页浏览型号MMBT2907AT_11的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MMBT2907AT  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
PNP General  
Purpose Amplifier  
xꢀ Capable of 150mWatts of Power Dissipation  
xꢀ Operating and Storage Junction Temperatures -55ć to 150ć  
xꢀ Collector Current: -0.6A  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
x
Marking:2F  
SOT-523  
A
D
C
Electrical Characteristics @ 25qC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage*  
(IC=-10mAdc, IB=0)  
-60  
-60  
-5.0  
Vdc  
Vdc  
C
B
Collector-Base Breakdown Voltage  
(IC=-10PAdc, IE=0)  
Emitter-Base Breakdown Voltage  
E
B
E
Vdc  
(IE=-10PAdc, IC=0)  
Collector Cut-off Current  
(VCB=-50Vdc, IE=0)  
-10  
-10  
nAdc  
nAdc  
H
G
J
IEBO  
Emitter Cut-off Current  
(VEB=-4Vdc, IC=0)  
K
ON CHARACTERISTICS  
hFE  
DC Current Gain*  
DIMENSIONS  
INCHES  
(IC=-0.1mAdc, VCE=-10Vdc)  
(IC=-1.0mAdc, VCE=-10Vdc)  
(IC=-10mAdc, VCE=-10Vdc)  
(IC=-150mAdc, VCE=-10Vdc)  
(IC=-500mAdc, VCE=-10Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-150mAdc, IB=-15mAdc)  
(IC=-500mAdc, IB=-50mAdc)  
Base-Emitter Saturation Voltage  
(IC=-150mAdc, IB=-15mAdc)  
(IC=-500mAdc, IB=-50mAdc)  
75  
100  
100  
100  
50  
MM  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
.059  
.030  
.057  
MAX  
.067  
.033  
.069  
MIN  
1.50  
0.75  
1.45  
MAX  
1.70  
0.85  
1.75  
NOTE  
300  
VCE(sat)  
.020 Nominal  
0.50Nominal  
0.90  
.000  
.70  
.100  
.25  
-0.4  
-1.6  
Vdc  
Vdc  
.035  
.043  
.004  
.031  
.008  
.014  
1.10  
.000  
.028  
.004  
.010  
.100  
0.80  
.200  
.35  
VBE(sat)  
-1.3  
-2.6  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Current Gain-Bandwidth Product  
(IC=-2mAdc, VCE=-12Vdc, f=30MHz)  
Output Capacitance  
(VCB=-12Vdc, IE=0, f=100kHz)  
140(Typ.)  
MHz  
pF  
Ccbo  
5.0  
SWITCHING CHARACTERISTICS  
Ton  
Turn-on Time  
Delay Time  
Rise Time  
45  
10  
ns  
ns  
ns  
ns  
ns  
ns  
(VCC=-30Vdc, IC=-150mAdc,  
IB1=-15mAdc)  
td  
tr  
40  
toff  
ts  
Turn-off Time  
Storage Time  
Fall Time  
100  
80  
(VCC=-6Vdc, IC=-150mAdc  
B1=IB2=-15mAdc)  
I
tf  
30  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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