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MMBT2907ARF PDF预览

MMBT2907ARF

更新时间: 2024-09-26 10:52:39
品牌 Logo 应用领域
TSC 晶体晶体管光电二极管
页数 文件大小 规格书
3页 250K
描述
350mW, PNP Small Signal Transistor

MMBT2907ARF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.6Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):110 ns最大开启时间(吨):50 ns
Base Number Matches:1

MMBT2907ARF 数据手册

 浏览型号MMBT2907ARF的Datasheet PDF文件第2页浏览型号MMBT2907ARF的Datasheet PDF文件第3页 
MMBT2907A  
350mW, PNP Small Signal Transistor  
Small Signal Transistor  
SOT-23  
3 Collector  
A
F
2 Emitter  
1 Base  
B
E
Features  
—Epitaxial planar die construction  
—Surface device type mounting  
—Moisture sensitivity level 1  
C
G
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Dimensions  
Min  
2.80  
1.20  
0.30  
1.80  
2.25  
0.90  
Max  
Min  
Max  
Mechanical Data  
—Case : SOT- 23 small outline plastic package  
A
B
C
D
E
F
3.00 0.110 0.118  
1.40 0.047 0.055  
0.50 0.012 0.020  
2.00 0.071 0.079  
2.55 0.089 0.100  
1.20 0.035 0.043  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Weight : 0.008gram (approximately)  
—Marking Code : 2F  
G
0.550 REF  
0.022 REF  
Ordering Information  
Suggested PAD Layout  
0.95  
Part No.  
MMBT2907A RF  
MMBT2907A RFG  
Package  
SOT-23  
SOT-23  
Packing  
Marking  
2F  
0.037  
3K / 7" Reel  
3K / 7" Reel  
2F  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
350  
Units  
mW  
V
Power Dissipation  
PD  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-60  
-60  
V
-5  
V
-600  
mA  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to + 150  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Version : A10  

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