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MMBT2907A-E6433 PDF预览

MMBT2907A-E6433

更新时间: 2024-11-18 19:58:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 85K
描述
Transistor

MMBT2907A-E6433 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):0.6 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.33 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):200 MHzBase Number Matches:1

MMBT2907A-E6433 数据手册

 浏览型号MMBT2907A-E6433的Datasheet PDF文件第2页浏览型号MMBT2907A-E6433的Datasheet PDF文件第3页浏览型号MMBT2907A-E6433的Datasheet PDF文件第4页浏览型号MMBT2907A-E6433的Datasheet PDF文件第5页浏览型号MMBT2907A-E6433的Datasheet PDF文件第6页浏览型号MMBT2907A-E6433的Datasheet PDF文件第7页 
SMBT2907A/MMBT2907A  
PNP Silicon Switching Transistor  
Low collector-emitter saturation voltage  
Complementary type:  
2
3
1
SMBT2222A / MMBT2222A (NPN)  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
Pin Configuration  
Package  
SMBT2907A/MMBT2907A s2F  
SOT23  
1 = B  
2 = E  
3 = C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
60  
60  
V
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CEO  
CBO  
EBO  
5
600  
100  
200  
330  
mA  
I
C
Base current  
I
B
Peak base current  
Total power dissipation  
I
BM  
mW  
°C  
P
tot  
T 77 °C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Junction - soldering point  
1
R
220  
thJS  
Pb-containing package may be available upon special request  
2
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
2007-04-26  
1

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