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MMBT2907AGH PDF预览

MMBT2907AGH

更新时间: 2024-11-20 10:52:39
品牌 Logo 应用领域
智威 - ZOWIE 晶体晶体管
页数 文件大小 规格书
3页 55K
描述
General Purpose Transistor PNP Silicon

MMBT2907AGH 数据手册

 浏览型号MMBT2907AGH的Datasheet PDF文件第2页浏览型号MMBT2907AGH的Datasheet PDF文件第3页 
Zowie Technology Corporation  
General Purpose Transistor  
PNP Silicon  
Halogen-free type  
Lead free product  
COLLECTOR  
3
3
BASE  
1
MMBT2907AGH  
1
2
2
SOT-23  
EMITTER  
MAXIMUM RATINGS  
Value  
-60  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Unit  
Vdc  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
-60  
Vdc  
Emitter-Base Voltage  
-5.0  
-600  
Vdc  
Collector Current-Continuous  
mAdc  
THERMAL CHARACTERISTICS  
Max.  
Symbol  
PD  
Unit  
Characteristic  
Total Device Dissipation FR-5 Board(1) TA=25oC  
225  
1.8  
mW  
Derate above 25oC  
mW / oC  
Thermal Resistance Junction to Ambient  
R
JA  
556  
oC / W  
Total Device Dissipation Alumina Substrate,(2) TA=25oC  
300  
2.4  
mW  
Derate above 25oC  
PD  
mW / oC  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R
JA  
417  
oC / W  
oC  
TJ,TSTG  
-55 to +150  
ELECTRICAL CHARACTERISTICS (TA  
=25oC unless otherwise noted)  
Max.  
Symbol  
Min.  
Unit  
Characteristic  
OFF CHARACTERISTICS  
Collector-Emitter Breakdowe Voltage(3)  
( IC= -1.0mAdc, IB=0 )  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
-60  
-60  
-5.0  
-
-
-
Vdc  
Vdc  
Vdc  
Collector-Base Breakdowe Voltage  
( IC= -10uAdc, IE=0 )  
Emitter - Base Breakdowe Voltage  
( IE= -10 uAdc, IC=0 )  
Collector Cutoff Current  
( VCE= -30 Vdc, VBE (off)= -0.5 Vdc )  
ICEX  
-
-50  
nAdc  
Collector Cutoff Current  
ICBO  
IB  
uAdc  
nAdc  
( VCB= -50 Vdc, IE=0 )  
-
-
-0.010  
-10  
( VCB= -50 Vdc, IE=0, TA=125oC )  
Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc )  
-
-50  
x
x
(1) FR-5=1.0 0.75 0.062in.  
x
x
(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.  
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.  
REV. 0  
Zowie Technology Corporation  

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