Datasheet > MMBT2907AGH

MMBT2907AGH

更新时间： 2024-09-25 10:52:39

品牌	Logo	应用领域
智威 - ZOWIE		晶体晶体管
页数	文件大小	规格书
3页	55K
描述
General Purpose Transistor PNP Silicon

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MMBT2907AGH 数据手册

Zowie Technology Corporation

General Purpose Transistor

PNP Silicon

Halogen-free type

Lead free product

COLLECTOR

BASE

MMBT2907AGH

SOT-23

EMITTER

MAXIMUM RATINGS

Value

-60

Symbol

VCEO

VCBO

VEBO

Unit

Vdc

Rating

Collector-Emitter Voltage

Collector-Base Voltage

-60

Vdc

Emitter-Base Voltage

-5.0

-600

Vdc

Collector Current-Continuous

mAdc

THERMAL CHARACTERISTICS

Max.

Symbol

Unit

Characteristic

Total Device Dissipation FR-5 Board⁽¹⁾TA=25^oC

225

1.8

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

556

^oC / W

Total Device Dissipation Alumina Substrate,⁽²⁾TA=25^oC

300

2.4

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

417

^oC / W

^oC

TJ,TSTG

-55 to +150

ELECTRICAL CHARACTERISTICS (TA

=25^oC unless otherwise noted)

Max.

Symbol

Min.

Unit

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdowe Voltage⁽³⁾

( IC= -1.0mAdc, IB=0 )

V(BR)CEO

V(BR)CBO

V(BR)EBO

-60

-5.0

Vdc

Collector-Base Breakdowe Voltage

( IC= -10uAdc, IE=0 )

Emitter - Base Breakdowe Voltage

( IE= -10 uAdc, IC=0 )

Collector Cutoff Current

( VCE= -30 Vdc, VBE (off)= -0.5 Vdc )

ICEX

-50

nAdc

Collector Cutoff Current

ICBO

uAdc

nAdc

( VCB= -50 Vdc, IE=0 )

-0.010

-10

( VCB= -50 Vdc, IE=0, TA=125^oC )

Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc )

-50

(1) FR-5=1.0 0.75 0.062in.

(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.

(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.

REV. 0

Zowie Technology Corporation

12 3

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