Datasheet > MMBT2907ALT1

MMBT2907ALT1

更新时间： 2024-11-18 07:17:15

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管光电二极管
页数	文件大小	规格书
5页	530K
描述
General Purpose Transistor PNP Silicon

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MMBT2907ALT1 数据手册

WILLAS

General Purpose Transistor

PNP Silicon

M MBT2907LT1

M MBT2907ALT1

RoHS product for packing code suffix "G",

•

Halogen free product for packing code suffix "H"

•

Weight : 0.008g

MAXIMUM RATINGS

Value

2907 2907A

Rating

Symbol

V _CEO

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

–40

–60

V _CBO

–60

–5.0

–600

Vdc

SOT–23

Vdc

EBO

I _C

mAdc

COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

BASE

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

Derate above 25°C

1.8

556

300

mW/°C

°C/W

EMITTER

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

T_J, T_stg

–55 to +150

DEVICE MARKING

M MBT2907LT1 = M2B, MMBT2907AL

T1 = 2F

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

(I _C= –10 mAdc, I _B= 0)

V _(BR)CEO

Vdc

M MBT2907

–40

–60

–5.0

—

M MBT2907A

Collector–Emitter Breakdown Voltage(I _C= –10 µAdc, I _E= 0)

Emitter–Base Breakdown Voltage(I _E= –10 µAdc, I _C= 0)

Collector Cutoff Current( V _CB= –30Vdc, I _BE(OFF)= –0.5Vdc)

Collector Cutoff Current

V _(BR)CBO

V _(BR)EBO

I _CEX

—

Vdc

—

–50

nAdc

µAdc

I _CBO

( V _CB= –50Vdc, I _E= 0)

M MBT2907

—

–0.020

–0.010

M MBT2907A

( V _CB= –50Vdc, I _E= 0, T _A=125°C )

M MBT2907

—

–20

–10

–50

M MBT2907A

Base Current( V _CE= –30Vdc, V _EB(off)= –0.5Vdc )

1. FR–5 = 1.0 x 0.75 x 0.062 in.

I _B

nAdc

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

12 3 4 5

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