Datasheet > MMBT2907A_10

MMBT2907A_10

更新时间： 2024-11-20 10:52:31

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
4页	161K
描述
NPN General Purpose Amplifier

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中文翻译

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数据手册

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MMBT2907A_10 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT2907A

Micro Commercial Components

Features

•

Surface Mount SOT-23 Package

Capable of 350mWatts of Pd, 600mA continuous collector current.

PNP General

Purpose Amplifier

xꢀ Operating and Storage Junction Temperatures: -55ć to 150ć

•

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

Pin Configuration

Top View

Marking : 2F

SOT-23

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_BL

Collector-Emitter Breakdown Voltage*

(I_C=10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=10µAdc, I_C=0)

Base Cutoff Current

Vdc

5.0

Vdc

nAdc

(V_CE=30Vdc, V_BE=0.5Vdc)

Collector Cutoff Current

(V_CE=30Vdc, V_BE=0.5Vdc)

Collector Cutoff Current

(V_CB=50Vdc, I_E=0)

I_CEX

I_CBO

0.1

10.0

µAdc

DIMENSIONS

(V_CB=50Vdc, I_E=0, T_A=150°C)

ON CHARACTERISTICS

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

h_FE

DC Current Gain*

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

(I_C=0.1mAdc, V_CE=10Vdc)

(I_C=1.0mAdc, V_CE=10Vdc)

(I_C=10mAdc, V_CE=10Vdc)

100

(I_C=150mAdc, V_CE=10Vdc)

(I_C=500mAdc, V_CE=10Vdc)

Collector-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

300

V_CE(sat)

0.4

1.6

Vdc

.085

.37

V_BE(sat)

Suggested Solder

Pad Layout

1.3

2.6

SMALL-SIGNAL CHARACTERISTICS

.031

.800

f_T

Current Gain-Bandwidth Product

(I_C=50mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=10Vdc, I_E=0, f=1.0MHz)

Input Capacitance

200

MHz

.035

.900

C_cbo

C_ibo

8.0

.079

2.000

inches

(V_EB=2.0Vdc, I_C=0, f=1.0MHz)

30.0

SWITCHING CHARACTERISTICS

t_d

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=3.0Vdc, I_C=150mAdc,

.037

.950

t_r

I_B1=15mAdc)

.037

.950

t_s

t_f

(V_CC=3.0Vdc, I_C=150mAdc

I_B1=I_B2=15mAdc)

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

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Revision: 7

2010/03/25

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