Datasheet > MMBT2907A/E9

MMBT2907A/E9

更新时间： 2024-11-20 19:58:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	34K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MMBT2907A/E9 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	50
JESD-609代码：	e3	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

MMBT2907A/E9 数据手册

MMBT2907A

New Product

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistor (PNP)

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Top View

Mounting Pad Layout

0.031 (0.8)

Pin Configuration

1 = Base 2 = Emitter

3 = Collector

0.035 (0.9)

0.079 (2.0)

.037(0.95)

0.037 (0.95)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Features

Mechanical Data

• PNP Silicon Epitaxial Planar Transistor for

switching and amplifier applications.

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

Marking Code: 2F

• This transistor is also available in the TO-92 case

with the type designation MPS2907A.

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

–V_CEO

–V_CBO

–V_EBO

–I_C

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

5.0

600

T_A= 25°C

Derate above 25°C

225

1.8

mW/°C

Power Dissipation⁽¹⁾

Power Dissipation⁽²⁾

P_tot

T_A= 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance

Junction to Ambient Air

FR-5 Board

Alumina Substrate

556

417

R_ΘJA

°C/W

Junction Temperature

T_j

150

°C

Storage Temperature Range

T_S

–55 to +150

Notes:

(1) FR-5 Board = 1.0 x 0.75 x 0.062 in.

(2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Document Number 88223

10-May-02

www.vishay.com

12 3

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