Datasheet > MMBT28S

MMBT28S

更新时间： 2024-09-14 14:53:59

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
3页	649K
描述
小信号晶体管

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数据手册

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MMBT28S 数据手册

MMBT28S

NPN Silicon Epitaxial Planar Transistor

The transistor is subdivided into one group, according

to its DC current gain.

Applications

SOT-23 Plastic Package

• Switching and amplifier applications

Absolute Maximum Ratings (T_a= 25

)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current

Base Current

I_CM

1.25

I_B

100

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_Stg

-55 to +150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 3

Dated : 15/05/2021 Rev:02

12 3

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