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MMBT2907_07 PDF预览

MMBT2907_07

更新时间: 2024-09-13 04:39:27
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体开关晶体管
页数 文件大小 规格书
2页 99K
描述
Surface Mount Si-Epi-Planar Switching Transistors

MMBT2907_07 数据手册

 浏览型号MMBT2907_07的Datasheet PDF文件第2页 
MMBT2907 / MMBT2907A  
MMBT2907 / MMBT2907A  
Surface Mount Si-Epi-Planar Switching Transistors  
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage  
PNP  
PNP  
Version 2006-05-15  
Power dissipation – Verlustleistung  
250 mW  
2.9±0.1  
1.1  
Plastic case  
Kunststoffgehäuse  
SOT-23  
(TO-236)  
0.4  
3
Type  
Code  
Weight approx. – Gewicht ca.  
0.01 g  
1
2
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.9  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
MMBT2907  
40 V  
MMBT2907A  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
- VCEO  
- VCBO  
- VEBO  
Ptot  
60 V  
60 V  
5 V  
250 mW 1)  
Collector current – Kollektorstrom (dc)  
- IC  
600 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
- IC = 0.1 mA, - VCE = 10 V  
- IC = 1 mA, - VCE = 10 V  
- IC = 10 mA, - VCE = 10 V  
- IC = 500 mA, - VCE = 10 V  
- IC = 150 mA, - VCE = 10 V  
MMBT2907  
MMBT2907A  
hFE  
hFE  
35  
75  
MMBT2907  
MMBT2907A  
hFE  
hFE  
50  
100  
MMBT2907  
MMBT2907A  
hFE  
hFE  
75  
100  
MMBT2907  
MMBT2907A  
hFE  
hFE  
30  
50  
hFE  
100  
300  
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)  
- IC = 150 mA, - IB = 15 mA  
- IC = 500 mA, - IB = 50 mA  
MMBT2907  
MMBT2907A  
- VCEsat  
- VCEsat  
0.4 V  
1.6 V  
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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