Datasheet > MMBT2907A

MMBT2907A

更新时间： 2024-09-16 17:01:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	334K
描述
60V,0.6A,General Purpose PNP Bipolar Transistor

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中文翻译

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数据手册

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MMBT2907A 数据手册

PNP Silicon Epitaxial Planar Transistor

MMBT2907A

Features



Epitaxial planar die construction

Complimentary to MMBT2222A

Ultra-small surface mount package

Mechanical Data



Case: SOT-23

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-23

Ordering Information

Part Number

Package

SOT-23

Shipping Quantity

Marking Code

MMBT2907A

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Collector-Base Breakdown Voltage

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

-60

-5

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

-0.6

-1.2

I_CM

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

300

Unit

C/W

°C

Thermal Resistance (Junction-to-Ambient) ^*1

Thermal Resistance (Junction-to-Case) ^*1

Thermal Resistance (Junction-to-Lead) ^*1

Ambient Temperature

R_θJA

R_θJC

R_θJL

T_A

417

380

350

-55 ~ +150

Operating junction Temperature

Storage Temperature Range

T_J

°C

T_STG

°C

Note 1: The data tested by surface mounted on a 15mm * 15mm * 1mm FR4-epoxy P.C.B

STM0139A: December 2023 [2.2]

www.gmesemi.com

12 3 4 5

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