JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT2907A
TRANSISTOR (PNP)
SOT-23
FEATURES
z
z
Epitaxial planar die construction
Complementary NPN Type available(MMBT2222A)
1. BASE
2. EMITTER
3. COLLECTOR
Marking: 2F
Solid dot = Green molding compound device,
if none,the normal device.
2 F
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
-60
-60
-5
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
Collector Current -Continuous
Total Device Dissipation
-600
250
500
mA
mW
℃/W
PD
RθJA
Thermal Resistance Junction to Ambient
Operation Junction and
Storage Temperature Range
TJ,Tstg
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
Test conditions
Min
-60
-60
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-10μA,IE=0
IC=-10mA,IB=0
V
IE=-10μA,IC=0
V
VCB=-50V,IE=0
-20
-10
-50
300
nA
nA
nA
Base cut-off current
IEBO
VEB=-3V, IC =0
Collector cut-off current
ICEX
VCE=-30 V, VBE(off) =-0.5V
VCE=-10V,IC=-150mA
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,f=100MHz
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)*
VCE(sat)*
VBE(sat)*
VBE(sat)*
fT
100
75
DC current gain
100
100
50
-0.4
-1.6
-1.3
-2.6
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
Transition frequency
Delay time
200
MHz
ns
ns
ns
ns
td
10
25
VCE=-30V,IC=-150mA,B1=-15mA
Rise time
tr
Storage time
Fall time
tS
225
60
VCE=-6V,IC=-150mA,
IB1=- IB2=- 15mA
tf
* pulse test: Pulse Width ≤300μs, Duty Cycle≤2.0%.
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Rev. - 2.1