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MMBT2907A

更新时间: 2024-11-06 14:55:59
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1301K
描述
SOT-23

MMBT2907A 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
MMBT2907A  
TRANSISTOR (PNP)  
SOT-23  
FEATURES  
z
z
Epitaxial planar die construction  
Complementary NPN Type available(MMBT2222A)  
1. BASE  
2. EMITTER  
3. COLLECTOR  
Marking: 2F  
Solid dot = Green molding compound device,  
if none,the normal device.  
2 F  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
-60  
-60  
-5  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Collector Current -Continuous  
Total Device Dissipation  
-600  
250  
500  
mA  
mW  
/W  
PD  
RθJA  
Thermal Resistance Junction to Ambient  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO*  
V(BR)EBO  
ICBO  
Test conditions  
Min  
-60  
-60  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=-10μA,IE=0  
IC=-10mA,IB=0  
V
IE=-10μA,IC=0  
V
VCB=-50V,IE=0  
-20  
-10  
-50  
300  
nA  
nA  
nA  
Base cut-off current  
IEBO  
VEB=-3V, IC =0  
Collector cut-off current  
ICEX  
VCE=-30 V, VBE(off) =-0.5V  
VCE=-10V,IC=-150mA  
VCE=-10V,IC=-0.1mA  
VCE=-10V,IC=-1mA  
VCE=-10V,IC=-10mA  
VCE=-10V,IC=-500mA  
IC=-150mA,IB=-15mA  
IC=-500mA,IB=-50mA  
IC=-150mA,IB=-15mA  
IC=-500mA,IB=-50mA  
VCE=-20V,IC=-50mA,f=100MHz  
hFE(1)  
hFE(2)  
hFE(3)  
hFE(4)  
hFE(5)  
VCE(sat)*  
VCE(sat)*  
VBE(sat)*  
VBE(sat)*  
fT  
100  
75  
DC current gain  
100  
100  
50  
-0.4  
-1.6  
-1.3  
-2.6  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
V
Transition frequency  
Delay time  
200  
MHz  
ns  
ns  
ns  
ns  
td  
10  
25  
VCE=-30V,IC=-150mA,B1=-15mA  
Rise time  
tr  
Storage time  
Fall time  
tS  
225  
60  
VCE=-6V,IC=-150mA,  
IB1=- IB2=- 15mA  
tf  
* pulse test: Pulse Width ≤300μs, Duty Cycle≤2.0%.  
www.jscj-elec.com  
1
Rev. - 2.1  

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