Datasheet > MMBT2907A

MMBT2907A

更新时间： 2024-09-13 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管光电二极管
页数	文件大小	规格书
2页	280K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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MMBT2907A 数据手册

RoHS

M M B T 2 9 0 7 A

MMBT2907A TRANSISTOR (PNP)

SOT-23

1. BASE

2. EMITTER

FEATURES

3. COLLECTOR

y Epitaxial planar die construction

y Complementary NPN Type available(MMBT2222A)

MARKING:2F

MAXIMUM RATINGS(T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

P_C

T_J

T_stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Value

-60

-5

-0.6

Units

℃

0.225

150

-55 to +150

Junction Temperature

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-60

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10μA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-10μA,I_C=0

I_CBO

I_CE0

V_CB=-50V,I_E=0

-20

-50

-10

n A

Collector cut-off current

V_CE=-30V,V_EB(0ff)=-0.5V

V_EB=-3V,I_C=0

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

V_CE(sat)

V_BE(sat)

V_CE=-10V,I_C=-0.1mA

V_CE=-10V,I_C=-1mA

V_CE=-10V,I_C=-10mA

V_CE=-10V,I_C=-150mA

V_CE=-10V,I_C=-500mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

100

DC current gain

300

-0.4

-1.6

-1.3

-2.6

Collector-emitter saturation voltage

Base-emitter saturation voltage

WEJ ELECTRONIC CO.,LTD

Transition frequency

Delay time

f_T

t_d

t_r

V_CE=-20V,I_C=-50mA,f=100MHz

200

MHz

_CC=-30V,I_C=-150mA I_B1=- 15mA

Rise time

Storage time

Fall time

t_S

t_f

225

V_CC=-6V,I_C=-150mA,I_B1=-I_B2=-15mA

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WEJ ELECTRONIC CO.,LTD

中文翻译

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