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MMBT2907A PDF预览

MMBT2907A

更新时间: 2024-11-17 21:55:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管光电二极管
页数 文件大小 规格书
7页 98K
描述
PNP General Purpose Amplifier

MMBT2907A 数据手册

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PN2907A  
MMBT2907A  
PZT2907A  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 2F  
B
SOT-223  
E
PNP General Purpose Amplifier  
This device is designed for use as a general purpose amplifier  
and switch requiring collector currents to 500 mA. Sourced  
from Process 63.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
60  
60  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
800  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN2907A  
*MMBT2907A **PZT2907A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1998 Fairchild Semiconductor Corporation  

MMBT2907A 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2907A_D87Z FAIRCHILD

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