Datasheet > MMBT2907A

MMBT2907A

更新时间： 2024-11-05 10:52:39

品牌	Logo	应用领域
上华 - COMCHIP		晶体晶体管光电二极管
页数	文件大小	规格书
5页	140K
描述
General Purpose Transistor (PNP)

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中文翻译

获取价格

数据手册

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MMBT2907A 数据手册

General Purpose Transistor (PNP)

COMCHIP

www.comchiptech.com

MMBT2907A

Features

Epitaxial Planar Die Construction

Complementary NPN Type Available (MMBT2222A)

Ideal for Medium Power Amplification and Switching

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

Mechanical Data

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

.016 (0.4)

Top View

COLLECTOR

Pin Configuration

1 = Base 2 = Emitter

3 = Collector

.037(0.95)

BASE

EMITTER

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

2907

2907A

Unit

Vdc

CEO

CBO

EBO

–40

–60

–5.0

–600

Vdc

Collector Current — Continuous

mAdc

Characteristic

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

417

T , T

J stg

–55 to +150

MDS030300B1

Page 1

12 3 4 5

中文翻译

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MMBT2907A/D87Z	TI	获取价格	800mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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