5秒后页面跳转
MMBT2907 PDF预览

MMBT2907

更新时间: 2024-09-13 04:39:27
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 晶体放大器晶体管开关光电二极管PC
页数 文件大小 规格书
4页 276K
描述
PNP General Purpose Amplifier

MMBT2907 数据手册

 浏览型号MMBT2907的Datasheet PDF文件第2页浏览型号MMBT2907的Datasheet PDF文件第3页浏览型号MMBT2907的Datasheet PDF文件第4页 
BL Galaxy Electrical  
Production specification  
PNP General Purpose Amplifier  
MMBT2907  
FEATURES  
Pb  
Lead-free  
z
Epitaxial planar die construction.  
Ideal for medium power amplification  
and switching.  
z
APPLICATIONS  
z
This device is designed as a general purpose amplifier  
and switching.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
M2B  
Package Code  
SOT-23  
MMBT2907  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-60  
-40  
-5  
V
V
Collector Current -Continuous  
Total Device Dissipation  
Junction and Storage Temperature  
-600  
350  
mA  
mW  
PD  
Tj,Tstg  
-55to+150  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Document number: BL/SSSTC090  
Rev.A  
www.galaxycn.com  
1

与MMBT2907相关器件

型号 品牌 获取价格 描述 数据表
MMBT2907_07 DIOTEC

获取价格

Surface Mount Si-Epi-Planar Switching Transistors
MMBT2907A SEMTECH

获取价格

PNP Silicon Epitaxial Planar Transistor
MMBT2907A TYSEMI

获取价格

Epitaxial Planar Die Construction
MMBT2907A WINNERJOIN

获取价格

TRANSISTOR (PNP)
MMBT2907A HTSEMI

获取价格

TRANSISTPR(PNP)
MMBT2907A MCC

获取价格

PNP General Purpose Amplifier
MMBT2907A TSC

获取价格

350mW, PNP Small Signal Transistor
MMBT2907A KODENSHI

获取价格

PNP Silicon Transistor
MMBT2907A SECOS

获取价格

General Purpose Transistor
MMBT2907A INFINEON

获取价格

PNP Silicon Switching Transistor Low collector-emitter saturation voltage