5秒后页面跳转
MMBT2907 PDF预览

MMBT2907

更新时间: 2024-09-14 14:54:43
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 616K
描述
SOT-23

MMBT2907 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.55
Base Number Matches:1

MMBT2907 数据手册

 浏览型号MMBT2907的Datasheet PDF文件第2页浏览型号MMBT2907的Datasheet PDF文件第3页浏览型号MMBT2907的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
MMBT2907  
TRANSISTOR (PNP)  
FEATURES  
z Epitaxial planar die construction  
1. BASE  
z Complementary NPN Type available(MMBT2222)  
2. EMITTER  
3. COLLECTOR  
Marking: M2B  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
-60  
-40  
-5  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Collector Current -Continuous  
Total Device Dissipation  
-600  
250  
500  
mA  
mW  
/W  
PD  
RθJA  
Thermal Resistance Junction to Ambient  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO*  
V(BR)EBO  
ICBO  
Test conditions  
Min  
-60  
-40  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=-10μA,IE=0  
IC=-10mA,IB=0  
V
IE=-10μA,IC=0  
V
VCB=-50V,IE=0  
-20  
-10  
-50  
300  
nA  
nA  
nA  
Base cut-off current  
IEBO  
VEB=-3V, IC =0  
Collector cut-off current  
ICEX  
VCE=-30 V, VBE(off) =-0.5V  
VCE=-10V,IC=-150mA  
VCE=-10V,IC=-0.1mA  
hFE(1)*  
hFE(2)*  
hFE(3)*  
VCE(sat)*  
VCE(sat)*  
VBE(sat)*  
VBE(sat)*  
fT  
100  
52  
DC current gain  
32  
VCE=-10V,IC=-500mA  
IC=-150mA,IB=-15mA  
IC=-500mA,IB=-50mA  
IC=-150mA,IB=-15mA  
IC=-500mA,IB=-50mA  
VCE=-20V,IC=-50mA,f=100MHz  
-0.4  
-0.67  
-1  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
V
-1.2  
Transition frequency  
Delay time  
200  
MHz  
ns  
ns  
ns  
ns  
td  
10  
25  
VCE=-30V,IC=-150mA,B1=-15mA  
Rise time  
tr  
Storage time  
tS  
225  
60  
VCE=-6V,IC=-150mA,  
IB1=- IB2=- 15mA  
Fall time  
tf  
*Pulse test: tp300μs, δ≤0.02.  
www.jscj-elec.com  
1
Rev. - 2.0  

与MMBT2907相关器件

型号 品牌 获取价格 描述 数据表
MMBT2907_07 DIOTEC

获取价格

Surface Mount Si-Epi-Planar Switching Transistors
MMBT2907A SEMTECH

获取价格

PNP Silicon Epitaxial Planar Transistor
MMBT2907A TYSEMI

获取价格

Epitaxial Planar Die Construction
MMBT2907A WINNERJOIN

获取价格

TRANSISTOR (PNP)
MMBT2907A HTSEMI

获取价格

TRANSISTPR(PNP)
MMBT2907A MCC

获取价格

PNP General Purpose Amplifier
MMBT2907A TSC

获取价格

350mW, PNP Small Signal Transistor
MMBT2907A KODENSHI

获取价格

PNP Silicon Transistor
MMBT2907A SECOS

获取价格

General Purpose Transistor
MMBT2907A INFINEON

获取价格

PNP Silicon Switching Transistor Low collector-emitter saturation voltage