5秒后页面跳转
MMBT2907 PDF预览

MMBT2907

更新时间: 2024-09-12 22:54:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
2页 45K
描述
PNP General Purpose Amplifier

MMBT2907 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:2.7
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:852307Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT PNPSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:NCU15WF104J6SRCSamacsys Released Date:2019-05-09 14:58:22
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):100 ns最大开启时间(吨):45 ns
Base Number Matches:1

MMBT2907 数据手册

 浏览型号MMBT2907的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
PN2907  
MMBT2907  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 2B  
E
PNP General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 500 mA. Sourced  
from Process 63. See PN2907A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
60  
V
V
5.0  
800  
V
Collector Current - Continuous  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN2907  
*MMBT2907  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
357  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

MMBT2907 替代型号

型号 品牌 替代类型 描述 数据表
BSR15 FAIRCHILD

类似代替

PNP General Purpose Amplifier
MMBT2907A FAIRCHILD

类似代替

PNP General Purpose Amplifier

与MMBT2907相关器件

型号 品牌 获取价格 描述 数据表
MMBT2907_07 DIOTEC

获取价格

Surface Mount Si-Epi-Planar Switching Transistors
MMBT2907A SEMTECH

获取价格

PNP Silicon Epitaxial Planar Transistor
MMBT2907A TYSEMI

获取价格

Epitaxial Planar Die Construction
MMBT2907A WINNERJOIN

获取价格

TRANSISTOR (PNP)
MMBT2907A HTSEMI

获取价格

TRANSISTPR(PNP)
MMBT2907A MCC

获取价格

PNP General Purpose Amplifier
MMBT2907A TSC

获取价格

350mW, PNP Small Signal Transistor
MMBT2907A KODENSHI

获取价格

PNP Silicon Transistor
MMBT2907A SECOS

获取价格

General Purpose Transistor
MMBT2907A INFINEON

获取价格

PNP Silicon Switching Transistor Low collector-emitter saturation voltage