5秒后页面跳转
MMBT2907 PDF预览

MMBT2907

更新时间: 2024-09-14 18:06:23
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 1079K
描述
SOT-23

MMBT2907 数据手册

 浏览型号MMBT2907的Datasheet PDF文件第2页浏览型号MMBT2907的Datasheet PDF文件第3页浏览型号MMBT2907的Datasheet PDF文件第4页 
A
MMBT2907  
BIPOLAR TRANSISTOR (PNP)  
FEATURES  
Complementary to MMBT2222  
General purpose Amplifier  
Surface Mount device  
SOT-23  
MECHANICAL DATA  
Case: SOT-23  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-60  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Power Dissipation  
-60  
-5  
-600  
250  
500  
150  
V
V
mA  
mW  
°C/W  
°C  
PC  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
R
θJA  
TJ  
Storage Temperature  
TSTG  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
I =-10 uA I =0  
V(BR)CBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
-60  
-60  
-5  
V
V
E
C
V(BR)CEO  
V(BR)EBO  
ICBO  
ICEX  
IEBO  
hFE1  
hFE2  
hFE3  
VCE(sat)  
VCE(sat)  
VBE(sat)  
VBE(sat)  
fT  
IC=-10mAIB=0  
I =-10uA I =0  
V
E
C
-20  
-50  
-10  
300  
nA  
nA  
nA  
VCB=-50V, IE=0  
VCE=-30V, VBE(OFF)=-0.5V  
VEB=-3V, IC=0  
VCE=-10V, IC=-150mA  
VCE=-10V, IC=-0.1mA  
VCE=-10V, IC=-500mA  
IC=-500mAIB=-50mA  
IC=-150mAIB=-15mA  
IC=-500mAIB=-50mA  
100  
52  
32  
DC current gain  
-0.67  
-0.4  
-1.2  
-1  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
V
IC=-150mAIB=-15mA  
VCE=-20V,IC=-50mA,f=100  
VCE=-30V,  
IC=-150mAIB1=-15mA  
VCE=-6V,IC=-150mA  
IB1=IB2=-15mA  
Transition frequency  
Delay time  
200  
MHz  
ns  
ns  
ns  
ns  
MHz  
td  
tr  
10  
25  
Rise time  
Storage time  
Fall time  
tS  
tf  
225  
60  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
L
H
100-200  
M2B  
200-300  
M2B  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

与MMBT2907相关器件

型号 品牌 获取价格 描述 数据表
MMBT2907_07 DIOTEC

获取价格

Surface Mount Si-Epi-Planar Switching Transistors
MMBT2907A SEMTECH

获取价格

PNP Silicon Epitaxial Planar Transistor
MMBT2907A TYSEMI

获取价格

Epitaxial Planar Die Construction
MMBT2907A WINNERJOIN

获取价格

TRANSISTOR (PNP)
MMBT2907A HTSEMI

获取价格

TRANSISTPR(PNP)
MMBT2907A MCC

获取价格

PNP General Purpose Amplifier
MMBT2907A TSC

获取价格

350mW, PNP Small Signal Transistor
MMBT2907A KODENSHI

获取价格

PNP Silicon Transistor
MMBT2907A SECOS

获取价格

General Purpose Transistor
MMBT2907A INFINEON

获取价格

PNP Silicon Switching Transistor Low collector-emitter saturation voltage