生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.26 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.05 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 250 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBT2484LT3G | ONSEMI |
获取价格 |
NPN Bipolar Transistor |
![]() |
MMBT2484S62Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon |
![]() |
MMBT28S | SEMTECH |
获取价格 |
NPN Silicon Epitaxial Planar Transistor |
![]() |
MMBT28S | SWST |
获取价格 |
小信号晶体管 |
![]() |
MMBT2906 | TI |
获取价格 |
MMBT2906 |
![]() |
MMBT2907 | SAMSUNG |
获取价格 |
PNP (GENERAL PURPOSE TRANSISTOR) |
![]() |
MMBT2907 | FAIRCHILD |
获取价格 |
PNP General Purpose Amplifier |
![]() |
MMBT2907 | DIOTEC |
获取价格 |
Surface mount Si-Epitaxial PlanarTransistors |
![]() |
MMBT2907 | SEMTECH |
获取价格 |
PNP Silicon Epitaxial Planar Transistor |
![]() |
MMBT2907 | WEITRON |
获取价格 |
PNP General Purpose Transistors |
![]() |