5秒后页面跳转
MJL1302A PDF预览

MJL1302A

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
6页 206K
描述
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

MJL1302A 技术参数

生命周期:Transferred零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.29
Is Samacsys:N最大集电极电流 (IC):15 A
基于收集器的最大容量:600 pF集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:200 W最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzVCEsat-Max:3 V
Base Number Matches:1

MJL1302A 数据手册

 浏览型号MJL1302A的Datasheet PDF文件第2页浏览型号MJL1302A的Datasheet PDF文件第3页浏览型号MJL1302A的Datasheet PDF文件第4页浏览型号MJL1302A的Datasheet PDF文件第5页浏览型号MJL1302A的Datasheet PDF文件第6页 
Order this document  
by MJL3281A/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
15 AMPERE  
COMPLEMENTARY  
SILICON POWER  
TRANSISTORS  
200 VOLTS  
The MJL3281A and MJL1302A are PowerBase power transistors for high power  
audio, disk head positioners and other linear applications.  
Designed for 100 W Audio Frequency  
Gain Complementary:  
— Gain Linearity from 100 mA to 7 A  
200 WATTS  
— High Gain — 60 to 175  
— h  
= 45 (Min) @ I = 8 A  
FE  
C
Low Harmonic Distortion  
High Safe Operation Area — 1 A/100 V @ 1 sec  
High f — 30 MHz Typical  
T
CASE 340G–02, STYLE 2  
TO–264  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector–Emitter Voltage  
Symbol  
Value  
200  
200  
7
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector–Emitter Voltage — 1.5 V  
Collector Current — Continuous  
V
CEX  
200  
I
C
15  
25  
(1)  
Collector Current — Peak  
Base Current — Continuous  
I
B
1.5  
Adc  
Total Power Dissipation @ T = 25°C  
Derate Above 25°C  
P
D
200  
1.43  
Watts  
W/°C  
C
Operating and Storage Junction Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.  
R
0.7  
°C/W  
θJC  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s is a trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

与MJL1302A相关器件

型号 品牌 获取价格 描述 数据表
MJL1302AG ONSEMI

获取价格

15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS
MJL16218 MOTOROLA

获取价格

POWER TRANSISTOR 15 AMPERES 1500 VOLTS - VCES 170 WATTS
MJL16218 ONSEMI

获取价格

POWER TRANSISTOR
MJL21193 ISC

获取价格

isc Silicon PNP Power Transistor
MJL21193 MOTOROLA

获取价格

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
MJL21193 ONSEMI

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21193 SAVANTIC

获取价格

Silicon PNP Power Transistors
MJL21193_07 ONSEMI

获取价格

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21193_10 ONSEMI

获取价格

Silicon Power Transistors
MJL21193G ONSEMI

获取价格

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS