5秒后页面跳转
MJL21193 PDF预览

MJL21193

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 162K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

MJL21193 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-264AA包装说明:CASE 340G-02, TO-3PBL, TO-264, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.27
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):16 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

MJL21193 数据手册

 浏览型号MJL21193的Datasheet PDF文件第2页浏览型号MJL21193的Datasheet PDF文件第3页浏览型号MJL21193的Datasheet PDF文件第4页浏览型号MJL21193的Datasheet PDF文件第5页浏览型号MJL21193的Datasheet PDF文件第6页 
Order this document  
by MJL21193/D  
SEMICONDUCTOR TECHNICAL DATA  
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are  
specifically designed for high power audio output, disk head positioners and linear  
applications.  
*Motorola Preferred Device  
16 AMPERE  
COMPLEMENTARY  
SILICON POWER  
TRANSISTORS  
250 VOLTS  
Total Harmonic Distortion Characterized  
High DC Current Gain – h  
Excellent Gain Linearity  
= 25 Min @ I = 8 Adc  
FE  
C
High SOA: 2.25 A, 80 V, 1 Second  
200 WATTS  
CASE 340G–02  
TO–3PBL  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
250  
400  
5
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
Emitter–Base Voltage  
Collector–Emitter Voltage – 1.5 V  
Collector Current — Continuous  
V
CEX  
400  
I
C
16  
30  
(1)  
Collector Current — Peak  
Base Current – Continuous  
I
B
5
Adc  
Total Power Dissipation @ T = 25°C  
Derate Above 25°C  
P
D
200  
1.43  
Watts  
W/°C  
C
Operating and Storage Junction Temperature Range  
T , T  
– 65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
0.7  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typical  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
(I = 100 mAdc, I = 0)  
V
250  
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current  
(V = 200 Vdc, I = 0)  
I
100  
µAdc  
CEO  
CE  
B
(1) Pulse Test: Pulse Width = 5.0 µs, Duty Cycle 10%.  
(continued)  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

MJL21193 替代型号

型号 品牌 替代类型 描述 数据表
MJL21193G ONSEMI

类似代替

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21193 MOTOROLA

功能相似

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS

与MJL21193相关器件

型号 品牌 获取价格 描述 数据表
MJL21193_07 ONSEMI

获取价格

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21193_10 ONSEMI

获取价格

Silicon Power Transistors
MJL21193G ONSEMI

获取价格

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21194 ISC

获取价格

isc Silicon NPN Power Transistor
MJL21194 MOTOROLA

获取价格

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
MJL21194 ONSEMI

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21194 SAVANTIC

获取价格

Silicon NPN Power Transistors
MJL21194G ONSEMI

获取价格

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21195 ONSEMI

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21195_05 ONSEMI

获取价格

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W