Datasheet > MJL3281

MJL3281

更新时间： 2024-11-11 22:30:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	206K
描述
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

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MJL3281 数据手册

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SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

15 AMPERE

COMPLEMENTARY

SILICON POWER

TRANSISTORS

200 VOLTS

•

The MJL3281A and MJL1302A are PowerBase power transistors for high power

audio, disk head positioners and other linear applications.

Designed for 100 W Audio Frequency

Gain Complementary:

— Gain Linearity from 100 mA to 7 A

•

200 WATTS

— High Gain — 60 to 175

— h

= 45 (Min) @ I = 8 A

•

Low Harmonic Distortion

High Safe Operation Area — 1 A/100 V @ 1 sec

High f — 30 MHz Typical

CASE 340G–02, STYLE 2

TO–264

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector–Emitter Voltage

Symbol

Value

200

Unit

Vdc

Adc

CEO

CBO

EBO

Collector–Base Voltage

Emitter–Base Voltage

Collector–Emitter Voltage — 1.5 V

Collector Current — Continuous

CEX

200

(1)

Collector Current — Peak

Base Current — Continuous

1.5

Adc

Total Power Dissipation @ T = 25°C

Derate Above 25°C

200

1.43

Watts

W/°C

Operating and Storage Junction Temperature Range

T , T

–65 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.

0.7

°C/W

θJC

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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