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MJL4281AG

更新时间： 2024-11-03 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 64K
描述
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS

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中文翻译

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MJL4281AG 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-264AA包装说明：LEAD FREE, CASE 340G-02, TO-3PBL, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：22 weeks
风险等级：1.8Samacsys Description：ON SEMICONDUCTOR - MJL4281AG - TRANSISTOR, NPN, 350V, 30A, TO264
最大集电极电流 (IC)：15 A集电极-发射极最大电压：350 V
配置：SINGLE最小直流电流增益 (hFE)：10
JEDEC-95代码：TO-264AAJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：230 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：35 MHz

MJL4281AG 数据手册

 浏览型号MJL4281AG的Datasheet PDF文件第2页浏览型号MJL4281AG的Datasheet PDF文件第3页浏览型号MJL4281AG的Datasheet PDF文件第4页浏览型号MJL4281AG的Datasheet PDF文件第5页 
MJL4281A (NPN)  
MJL4302A (PNP)  
Preferred Device  
Complementary NPN−PNP  
Silicon Power Bipolar  
Transistors  
http://onsemi.com  
The MJL4281A and MJL4302A are PowerBaset power transistors  
for high power audio.  
15 AMPERES  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
350 VOLTS, 230 WATTS  
• 350 V Collector−Emitter Sustaining Voltage  
• Gain Complementary:  
Gain Linearity from 100 mA to 5 A  
High Gain − 80 to 240  
h
= 50 (min) @ I = 8 A  
C
FE  
• Low Harmonic Distortion  
• High Safe Operation Area − 1.0 A/100 V @ 1 Second  
1
• High f  
T
2
3
• Pb−Free Packages are Available*  
TO−264  
CASE 340G  
STYLE 2  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Symbol  
Value  
350  
Unit  
Vdc  
Vdc  
MARKING DIAGRAM  
V
CEO  
V
CBO  
V
EBO  
350  
Emitter−Base Voltage  
5.0  
Vdc  
Vdc  
Adc  
MJL4xxxA  
AYYWWG  
Collector−Emitter Voltage − 1.5 V  
V
350  
CEX  
Collector Current − Continuous  
Collector Current − Peak (Note 1)  
I
15  
30  
C
Base Current − Continuous  
I
1.5  
Adc  
B
1 BASE  
3 EMITTER  
2 COLLECTOR  
Total Power Dissipation @ T = 25°C  
P
230  
1.84  
W
°C/W  
C
D
Derate Above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−ꢀꢀ65 to +150  
°C  
J
stg  
xxx = 281 or 302  
A
YY  
= Assembly Location  
= Year  
THERMAL CHARACTERISTICS  
WW = Work Week  
= Pb−Free Package  
Characteristic  
Symbol  
Max  
Unit  
G
Thermal Resistance, Junction−to−Case  
R
q
JC  
0.54  
°C/W  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MJL4281A  
TO−264  
25 Units/Rail  
25 Units/Rail  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.  
MJL4281AG  
TO−264  
(Pb−Free)  
MJL4302A  
TO−264  
25 Units/Rail  
25 Units/Rail  
MJL4302AG  
TO−264  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 2  
MJL4281A/D  
 
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中文翻译

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MJL4281AG 替代型号

型号 品牌 替代类型 描述 数据表
MJL4281A ONSEMI

完全替代

 Complementary NPN-PNP Silicon Power Bipolar Transistors

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