MJL4281A

更新时间： 2024-11-02 22:30:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
6页	59K
描述
Complementary NPN-PNP Silicon Power Bipolar Transistors

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中文翻译

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数据手册
替代型号

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MJL4281A 数据手册

MJL4281A (NPN)

MJL4302A (PNP)

Preferred Device

Complementary NPN−PNP

Silicon Power Bipolar

Transistors

http://onsemi.com

The MJL4281A and MJL4302A are PowerBaset power transistors

for high power audio.

15 AMPERES

COMPLEMENTARY

SILICON POWER

TRANSISTORS

350 VOLTS

• 350 V Collector−Emitter Sustaining Voltage

• Gain Complementary:

Gain Linearity from 100 mA to 5 A

High Gain − 80 to 240

= 50 (min) @ I = 8 A

• Low Harmonic Distortion

• High Safe Operation Area − 1.0 A/100 V @ 1 Second

230 WATTS

• High f

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

350

5.0

Unit

Vdc

Adc

CEO

CBO

EBO

TO−264

CASE 340G

STYLE 2

Collector−Emitter Voltage − 1.5 V

CEX

350

MARKING DIAGRAM

Collector Current − Continuous

Collector Current − Peak (Note 1)

MJL

Base Current − Continuous

1.5

Adc

4xxxA

LLYWW

Total Power Dissipation @ T = 25°C

Derate Above 25°C

230

1.84

Watts

°C/W

Operating and Storage Junction

Temperature Range

T , T

−ꢀ 65 to

+150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

1 BASE

2 COLLECTOR

MJL4xxxA = Device Code

3 EMITTER

Symbol

Max

Unit

Thermal Resistance,

Junction to Case

0.54

°C/W

xxx

= 281 OR 302

= Location Code

= Year

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

= Work Week

ORDERING INFORMATION

Device

Package

TO−264

Shipping

MJL4281A

MJL4302A

25 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

July, 2003 − Rev. 1

MJL4281A/D

12 3 4 5 6

中文翻译

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MJL4281A 替代型号

型号	品牌	替代类型	描述	数据表
MJL4281AG	ONSEMI	完全替代	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS

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