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MJL4302A PDF预览

MJL4302A

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
6页 59K
描述
Complementary NPN-PNP Silicon Power Bipolar Transistors

MJL4302A 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-264AA包装说明:CASE 340G-02, TO-3PBL, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.4
Is Samacsys:N最大集电极电流 (IC):15 A
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):230 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):35 MHzBase Number Matches:1

MJL4302A 数据手册

 浏览型号MJL4302A的Datasheet PDF文件第2页浏览型号MJL4302A的Datasheet PDF文件第3页浏览型号MJL4302A的Datasheet PDF文件第4页浏览型号MJL4302A的Datasheet PDF文件第5页浏览型号MJL4302A的Datasheet PDF文件第6页 
MJL4281A (NPN)  
MJL4302A (PNP)  
Preferred Device  
Complementary NPN−PNP  
Silicon Power Bipolar  
Transistors  
http://onsemi.com  
The MJL4281A and MJL4302A are PowerBaset power transistors  
for high power audio.  
15 AMPERES  
COMPLEMENTARY  
SILICON POWER  
TRANSISTORS  
350 VOLTS  
350 V Collector−Emitter Sustaining Voltage  
Gain Complementary:  
Gain Linearity from 100 mA to 5 A  
High Gain − 80 to 240  
h
FE  
= 50 (min) @ I = 8 A  
C
Low Harmonic Distortion  
High Safe Operation Area − 1.0 A/100 V @ 1 Second  
230 WATTS  
High f  
T
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
350  
350  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
1
2
V
CEO  
V
CBO  
V
EBO  
3
TO−264  
CASE 340G  
STYLE 2  
Collector−Emitter Voltage − 1.5 V  
V
CEX  
350  
MARKING DIAGRAM  
Collector Current − Continuous  
Collector Current − Peak (Note 1)  
I
C
15  
30  
MJL  
Base Current − Continuous  
I
B
1.5  
Adc  
4xxxA  
LLYWW  
Total Power Dissipation @ T = 25°C  
Derate Above 25°C  
P
D
230  
1.84  
Watts  
°C/W  
C
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
1 BASE  
2 COLLECTOR  
MJL4xxxA = Device Code  
3 EMITTER  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction to Case  
R
0.54  
°C/W  
q
JC  
xxx  
LL  
= 281 OR 302  
= Location Code  
= Year  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.  
Y
WW  
= Work Week  
ORDERING INFORMATION  
Device  
Package  
TO−264  
TO−264  
Shipping  
MJL4281A  
MJL4302A  
25 Units/Rail  
25 Units/Rail  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
July, 2003 − Rev. 1  
MJL4281A/D  

MJL4302A 替代型号

型号 品牌 替代类型 描述 数据表
MJL4302AG ONSEMI

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15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS

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