Datasheet > MJL3281A_05

MJL3281A_05

更新时间： 2024-11-03 03:49:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	68K
描述
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS

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中文翻译

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数据手册

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MJL3281A_05 数据手册

MJL3281A (NPN)

MJL1302A (PNP)

Preferred Devices

Complementary Bipolar

Power Transistors

Features

http://onsemi.com

• Exceptional Safe Operating Area

• NPN/PNP Gain Matching within 10% from 50 mA to 5 A

• Excellent Gain Linearity

• High BVCEO

15 AMPERES

COMPLEMENTARY

SILICON POWER

TRANSISTORS

260 VOLTS

• High Frequency

• Pb−Free Packages are Available

Benefits

• Reliable Performance at Higher Powers

200 WATTS

• Symmetrical Characteristics in Complementary Configurations

• Accurate Reproduction of Input Signal

• Greater Dynamic Range

MARKING DIAGRAM

• High Amplifier Bandwith

Applications

• High−End Consumer Audio Products

♦Home Amplifiers

MJLxxxxA

AYYWWG

♦Home Receivers

• Professional Audio Amplifiers

♦Theater and Stadium Sound Systems

♦Public Address Systems (PAs)

TO−264

CASE 340G

STYLE 2

BASE

EMITTER

2 COLLECTOR

xxxx

= 3281 or 1302

= Location Code

= Year

= Work Week

= Pb−Free Package

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

260

5.0

Unit

Vdc

Adc

CEO

CBO

EBO

ORDERING INFORMATION

Collector−Emitter Voltage − 1.5 V

CEX

260

Device

Package

Shipping

Collector Current − Continuous

− Peak (Note 1)

MJL3281A

TO−264

25 Units/Rail

Base Current − Continuous

1.5

Adc

MJL3281AG

TO−264

(Pb−Free)

Total Power Dissipation @ T = 25°C

200

Watts

Derate Above 25°C

1.43

W/°C

MJL1302A

TO−264

25 Units/Rail

Operating and Storage Junction

Temperature Range

T , T

−ꢀ 65 to

+150

°C

stg

MJL1302AG

TO−264

(Pb−Free)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Preferred devices are recommended choices for future use

and best overall value.

Thermal Resistance, Junction−to−Case

0.625

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

Publication Order Number:

October, 2005 − Rev. 9

MJL3281A/D

12 3 4 5

中文翻译

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与MJL3281A_05相关器件

型号	品牌	获取价格	描述	数据表
MJL3281AG	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS
MJL4281A	ONSEMI	获取价格	Complementary NPN-PNP Silicon Power Bipolar Transistors
MJL4281A_06	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS
MJL4281AG	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS
MJL4302A	ONSEMI	获取价格	Complementary NPN-PNP Silicon Power Bipolar Transistors
MJL4302AG	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS
MJLF147-X	NSC	获取价格	WIDE BANDWIDTH QUAD JFET INPUT OPERATIONAL AMPLIFIER
MJLF155-X	NSC	获取价格	JFET INPUT LOW POWER
MJLM108A-X	NSC	获取价格	OPERATIONAL AMPLIFIERS (SINGLE)
MJLM120-5-H	NSC	获取价格	VOLTAGE REGULATOR -5 VOLTS AT .5A

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