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MJL3281A_05 PDF预览

MJL3281A_05

更新时间: 2024-11-20 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 68K
描述
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS

MJL3281A_05 数据手册

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MJL3281A (NPN)  
MJL1302A (PNP)  
Preferred Devices  
Complementary Bipolar  
Power Transistors  
Features  
http://onsemi.com  
Exceptional Safe Operating Area  
NPN/PNP Gain Matching within 10% from 50 mA to 5 A  
Excellent Gain Linearity  
High BVCEO  
15 AMPERES  
COMPLEMENTARY  
SILICON POWER  
TRANSISTORS  
260 VOLTS  
High Frequency  
Pb−Free Packages are Available  
Benefits  
Reliable Performance at Higher Powers  
200 WATTS  
Symmetrical Characteristics in Complementary Configurations  
Accurate Reproduction of Input Signal  
Greater Dynamic Range  
MARKING DIAGRAM  
High Amplifier Bandwith  
Applications  
High−End Consumer Audio Products  
Home Amplifiers  
MJLxxxxA  
AYYWWG  
1
2
Home Receivers  
3
Professional Audio Amplifiers  
Theater and Stadium Sound Systems  
Public Address Systems (PAs)  
TO−264  
CASE 340G  
STYLE 2  
1
3
BASE  
EMITTER  
2 COLLECTOR  
xxxx  
A
YY  
WW  
G
= 3281 or 1302  
= Location Code  
= Year  
= Work Week  
= Pb−Free Package  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
260  
260  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
ORDERING INFORMATION  
Collector−Emitter Voltage − 1.5 V  
V
CEX  
260  
Device  
Package  
Shipping  
Collector Current − Continuous  
− Peak (Note 1)  
I
C
15  
25  
MJL3281A  
TO−264  
25 Units/Rail  
25 Units/Rail  
Base Current − Continuous  
I
B
1.5  
Adc  
MJL3281AG  
TO−264  
(Pb−Free)  
Total Power Dissipation @ T = 25°C  
P
D
200  
Watts  
C
Derate Above 25°C  
1.43  
W/°C  
MJL1302A  
TO−264  
25 Units/Rail  
25 Units/Rail  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+150  
°C  
J
stg  
MJL1302AG  
TO−264  
(Pb−Free)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Preferred devices are recommended choices for future use  
and best overall value.  
Thermal Resistance, Junction−to−Case  
R
0.625  
°C/W  
θ
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005 − Rev. 9  
MJL3281A/D  
 

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