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MJL21196G PDF预览

MJL21196G

更新时间: 2024-11-03 03:49:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 164K
描述
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MJL21196G 数据手册

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MJL21195, MJL21196  
Preferred Device  
Silicon Power Transistors  
The MJL21195 and MJL21196 utilize Perforated Emitter  
technology and are specifically designed for high power audio output,  
disk head positioners and linear applications.  
Total Harmonic Distortion Characterized  
High DC Current Gain h = 25 Min @ I = 8 Adc  
http://onsemi.com  
FE  
C
Excellent Gain Linearity  
High SOA: 2.50 A, 80 V, 1 Second  
Epoxy Meets UL 94, V0 @ 0.125 in  
16 A COMPLEMENTARY  
SILICON POWER  
TRANSISTORS  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
PbFree Packages are Available*  
250 V, 200 W  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
250  
400  
5
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
MJLxxxx  
AYYWWG  
CollectorEmitter Voltage 1.5 V  
V
400  
CEX  
Collector Current Continuous  
Collector Current Peak (Note 1)  
I
16  
30  
C
TO264  
CASE 340G  
STYLE 2  
Base Current Continuous  
I
5
Adc  
B
Total Power Dissipation @ T = 25°C  
P
200  
1.43  
W
W/°C  
C
D
Derate Above 25°C  
xxxx  
A
= 21195 or 21196  
= Assembly Location  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
°C  
J
stg  
+150  
WL, L = Wafer Lot  
YY, Y = Year  
WW, W = Work Week  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
G
= PbFree Package  
Thermal Resistance, JunctiontoCase  
R
q
JC  
0.7  
°C/W  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 Rev. 3  
MJL21195/D  

MJL21196G 替代型号

型号 品牌 替代类型 描述 数据表
MJL21196 ONSEMI

完全替代

COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21194G ONSEMI

类似代替

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

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