Datasheet > MJL21196G

MJL21196G

更新时间： 2024-11-20 03:49:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	164K
描述
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

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中文翻译

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替代型号

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MJL21196G 数据手册

MJL21195, MJL21196

Preferred Device

Silicon Power Transistors

The MJL21195 and MJL21196 utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

• Total Harmonic Distortion Characterized

• High DC Current Gain − h = 25 Min @ I = 8 Adc

http://onsemi.com

• Excellent Gain Linearity

• High SOA: 2.50 A, 80 V, 1 Second

• Epoxy Meets UL 94, V−0 @ 0.125 in

16 A COMPLEMENTARY

SILICON POWER

TRANSISTORS

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available*

250 V, 200 W

MARKING

DIAGRAM

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

250

400

Unit

Vdc

Adc

CEO

CBO

EBO

MJLxxxx

AYYWWG

Collector−Emitter Voltage − 1.5 V

400

CEX

Collector Current − Continuous

Collector Current − Peak (Note 1)

TO−264

CASE 340G

STYLE 2

Base Current − Continuous

Adc

Total Power Dissipation @ T = 25°C

200

1.43

W/°C

Derate Above 25°C

xxxx

= 21195 or 21196

= Assembly Location

Operating and Storage Junction

Temperature Range

T , T

−ꢀ 65 to

°C

stg

+150

WL, L = Wafer Lot

YY, Y = Year

WW, W = Work Week

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

= Pb−Free Package

Thermal Resistance, Junction−to−Case

0.7

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

June, 2005 − Rev. 3

MJL21195/D

12 3 4 5 6 7 8

中文翻译

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MJL21196G 替代型号

型号	品牌	替代类型	描述	数据表
MJL21196	ONSEMI	完全替代	COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21194G	ONSEMI	类似代替	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

与MJL21196G相关器件

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MJL3281	MOTOROLA	获取价格	15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
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MJL3281A	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
MJL3281A_05	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS
MJL3281AG	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS
MJL4281A	ONSEMI	获取价格	Complementary NPN-PNP Silicon Power Bipolar Transistors
MJL4281A_06	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS
MJL4281AG	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS
MJL4302A	ONSEMI	获取价格	Complementary NPN-PNP Silicon Power Bipolar Transistors
MJL4302AG	ONSEMI	获取价格	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS

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