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MJL21194G PDF预览

MJL21194G

更新时间： 2024-11-24 03:45:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
6页 152K
描述
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

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中文翻译

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MJL21194G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-264AA包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.86外壳连接：ISOLATED
最大集电极电流 (IC)：16 A集电极-发射极最大电压：250 V
配置：SINGLE最小直流电流增益 (hFE)：8
JEDEC-95代码：TO-264AAJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：200 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Matte Tin (Sn) - annealed
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：4 MHz
Base Number Matches：1

MJL21194G 数据手册

 浏览型号MJL21194G的Datasheet PDF文件第2页浏览型号MJL21194G的Datasheet PDF文件第3页浏览型号MJL21194G的Datasheet PDF文件第4页浏览型号MJL21194G的Datasheet PDF文件第5页浏览型号MJL21194G的Datasheet PDF文件第6页 
MJL21193, MJL21194  
Preferred Device  
Silicon Power Transistors  
The MJL21193 and MJL21194 utilize Perforated Emitter  
technology and are specifically designed for high power audio output,  
disk head positioners and linear applications.  
Features  
http://onsemi.com  
• Total Harmonic Distortion Characterized  
• High DC Current Gain −  
16 AMPERE COMPLEMENTARY  
SILICON POWER  
h
= 25 Min @ I  
= 8 Adc  
FE  
C
• Excellent Gain Linearity  
• High SOA: 2.25 A, 80 V, 1 Second  
• Pb−Free Packages are Available*  
TRANSISTORS  
250 VOLTS, 200 WATTS  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
250  
400  
5
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector−Emitter Voltage − 1.5 V  
V
CEO  
V
CBO  
V
EBO  
MJL2119x  
AYYWWG  
TO−3PBL  
(TO−264)  
CASE 340G  
V
400  
CEX  
Collector Current − Continuous  
I
16  
30  
C
Peak (Note 1)  
Base Current − Continuous  
I
5
Adc  
B
Total Power Dissipation @ T = 25_C  
P
200  
1.43  
W
C
D
x
A
YY  
WW  
G
= 3 or 4  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Derate above 25_C  
W/_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to  
+150  
_C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Thermal Resistance, Junction−to−Case  
R
0.7  
_C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%  
†
25 Units / Rail  
25 Units / Rail  
Device  
Package  
Shipping  
MJL21193  
TO−264  
MJL21193G  
TO−264  
(Pb−Free)  
MJL21194  
TO−264  
25 Units / Rail  
25 Units / Rail  
MJL21194G  
TO−264  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 5  
MJL21193/D  
123456

中文翻译

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MJL21194G 替代型号

型号 品牌 替代类型 描述 数据表
MJL21196G ONSEMI

类似代替

 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21194 ONSEMI

类似代替

 COMPLEMENTARY SILICON POWER TRANSISTORS

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