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MJL21195 PDF预览

MJL21195

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管放大器局域网
页数 文件大小 规格书
6页 139K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

MJL21195 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-264AA包装说明:CASE 340G-02, TO-3BPL, TO-264, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.26最大集电极电流 (IC):16 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):8JEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

MJL21195 数据手册

 浏览型号MJL21195的Datasheet PDF文件第2页浏览型号MJL21195的Datasheet PDF文件第3页浏览型号MJL21195的Datasheet PDF文件第4页浏览型号MJL21195的Datasheet PDF文件第5页浏览型号MJL21195的Datasheet PDF文件第6页 
Order this document  
by MJL21195/D  
SEMICONDUCTOR TECHNICAL DATA  
The MJL21195 and MJL21196 utilize Perforated Emitter technology and are  
specifically designed for high power audio output, disk head positioners and linear  
applications.  
*Motorola Preferred Device  
16 AMPERE  
COMPLEMENTARY  
SILICON POWER  
TRANSISTORS  
250 VOLTS  
Total Harmonic Distortion Characterized  
High DC Current Gain – h  
Excellent Gain Linearity  
= 25 Min @ I = 8 Adc  
FE  
C
High SOA: 2.50 A, 80 V, 1 Second  
200 WATTS  
CASE 340G–02  
TO–3PBL  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
250  
400  
5
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
Emitter–Base Voltage  
Collector–Emitter Voltage – 1.5 V  
Collector Current — Continuous  
V
CEX  
400  
I
C
16  
30  
(1)  
Collector Current — Peak  
Base Current – Continuous  
I
B
5
Adc  
Total Power Dissipation @ T = 25°C  
Derate Above 25°C  
P
D
200  
1.43  
Watts  
W/°C  
C
Operating and Storage Junction Temperature Range  
T , T  
– 65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
0.7  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typical  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
(I = 100 mAdc, I = 0)  
V
250  
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current  
(V = 200 Vdc, I = 0)  
I
100  
µAdc  
CEO  
CE  
B
(1) Pulse Test: Pulse Width = 5.0 µs, Duty Cycle 10%.  
(continued)  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1998

MJL21195 替代型号

型号 品牌 替代类型 描述 数据表
MJL21195G ONSEMI

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