MJL21194

更新时间： 2024-11-03 12:20:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	240K
描述
isc Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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MJL21194 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Is Samacsys：	N	Base Number Matches：	1

MJL21194 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJL21194

DESCRIPTION

·Total Harmonic Distortion Characterized

·High DC Current Gain

·High Area of Safe Operation

APPLICATIONS

·Designed for high power audio output, disk head positioners

and linear applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

400

250

UNIT

Collector Current-Continuous

Collector Current-Pulsed

Base Current-Continuous

Total Power Dissipation (T_C=25℃)

Junction Temperature

I_CM

I_B

P_D

200

150

-65~150

℃

T_j

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

ThermalResistance Junction To Case

0.7

℃/W

R_{th j-C}

isc Website：www.iscsemi.cn

中文翻译

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