Datasheet > MJL16218

MJL16218

更新时间： 2024-11-02 22:30:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关
页数	文件大小	规格书
8页	160K
描述
POWER TRANSISTOR

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MJL16218 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Bipolar Power Deflection Transistor

For High and Very High Resolution Monitors

*Motorola Preferred Device

POWER TRANSISTOR

15 AMPERES

The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,

high and very high resolution, full page, monochrome monitors.

1500 VOLTS — V

CES

170 WATTS

•

1500 Volt Collector–Emitter Breakdown Capability

Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)

Application Specific State–of–the–Art Die Design

Fast Switching:

175 ns Inductive Fall Time (Typ)

2000 ns Inductive Storage Time (Typ)

•

Low Saturation Voltage:

0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive

Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — V

High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —

8.0 Volts (Min)

•

CES

CASE 340G–02, STYLE 2

TO–3PBL

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Breakdown Voltage

Collector–Emitter Sustaining Voltage

Emitter–Base Voltage

1500

650

8.0

Vdc

Adc

CES

CEO(sus)

EBO

Collector Current — Continuous

— Pulsed (1)

Base Current — Continuous

— Pulsed (1)

7.0

Adc

W (BER)

Maximum Repetitive Emitter–Base

Avalanche Energy

0.2

Total Power Dissipation @ T = 25°C

170

1.49

Watts

@ T = 100°C

Derated above T = 25°C

W/°C

°C

Operating and Storage Temperature Range

T , T

– 55 to 125

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

0.67

275

Unit

°C/W

°C

Thermal Resistance — Junction to Case

θJC

Lead Temperature for Soldering Purposes

1/8″ from the case for 5 seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

(2) Proper strike and creepage distance must be provided.

Designer’s and SCANSWITCH are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁷r Power Transistor Device Data

12 3 4 5 6 7 8

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与MJL16218相关器件

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MJL21193_07	ONSEMI	获取价格	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21193_10	ONSEMI	获取价格	Silicon Power Transistors
MJL21193G	ONSEMI	获取价格	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21194	ISC	获取价格	isc Silicon NPN Power Transistor
MJL21194	MOTOROLA	获取价格	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
MJL21194	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS

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