5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率双极晶体管> MJL16218
MJL16218 PDF预览

MJL16218

更新时间： 2024-11-19 22:30:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关
页数 文件大小 规格书
8页 160K
描述
POWER TRANSISTOR 15 AMPERES 1500 VOLTS - VCES 170 WATTS

阅读下载

中文翻译

获取价格

MJL16218 技术参数

生命周期：Transferred零件包装代码：TO-3PBL
包装说明：IN-LINE, R-PSIP-T3针数：2
Reach Compliance Code：unknown风险等级：5.45
最大集电极电流 (IC)：15 A集电极-发射极最大电压：650 V
配置：SINGLE最小直流电流增益 (hFE)：4
JESD-30 代码：R-PSIP-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
极性/信道类型：NPN最大功率耗散 (Abs)：170 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：0.8 MHzBase Number Matches：1

MJL16218 数据手册

 浏览型号MJL16218的Datasheet PDF文件第2页浏览型号MJL16218的Datasheet PDF文件第3页浏览型号MJL16218的Datasheet PDF文件第4页浏览型号MJL16218的Datasheet PDF文件第5页浏览型号MJL16218的Datasheet PDF文件第6页浏览型号MJL16218的Datasheet PDF文件第7页 
Order this document  
by MJL16218/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Deflection Transistor  
For High and Very High Resolution Monitors  
*Motorola Preferred Device  
POWER TRANSISTOR  
15 AMPERES  
The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is  
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,  
high and very high resolution, full page, monochrome monitors.  
1500 VOLTS — V  
CES  
170 WATTS  
•
•
•
•
1500 Volt Collector–Emitter Breakdown Capability  
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)  
Application Specific State–of–the–Art Die Design  
Fast Switching:  
175 ns Inductive Fall Time (Typ)  
2000 ns Inductive Storage Time (Typ)  
•
Low Saturation Voltage:  
0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive  
Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — V  
High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —  
8.0 Volts (Min)  
•
•
CES  
CASE 340G–02, STYLE 2  
TO–3PBL  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector–Emitter Breakdown Voltage  
Collector–Emitter Sustaining Voltage  
Emitter–Base Voltage  
V
1500  
650  
8.0  
Vdc  
Vdc  
Vdc  
Adc  
CES  
V
CEO(sus)  
V
EBO  
Collector Current — Continuous  
— Pulsed (1)  
I
C
15  
20  
I
CM  
Base Current — Continuous  
— Pulsed (1)  
I
7.0  
14  
Adc  
mJ  
B
I
BM  
W (BER)  
Maximum Repetitive Emitter–Base  
Avalanche Energy  
0.2  
Total Power Dissipation @ T = 25°C  
P
170  
39  
1.49  
Watts  
C
D
@ T = 100°C  
C
Derated above T = 25°C  
W/°C  
°C  
C
Operating and Storage Temperature Range  
T , T  
J
– 55 to 125  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
0.67  
275  
Unit  
°C/W  
°C  
Thermal Resistance — Junction to Case  
R
θJC  
Lead Temperature for Soldering Purposes  
1/8″ from the case for 5 seconds  
T
L
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(2) Proper strike and creepage distance must be provided.  
Designer’s and SCANSWITCH are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997
12345678

中文翻译

下载PDF

与MJL16218相关器件

型号 品牌 获取价格 描述 数据表
MJL21193 ISC

获取价格

 		isc Silicon PNP Power Transistor
MJL21193 MOTOROLA

获取价格

 		16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
MJL21193 ONSEMI

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21193 SAVANTIC

获取价格

 		Silicon PNP Power Transistors
MJL21193_07 ONSEMI

获取价格

 		16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21193_10 ONSEMI

获取价格

 		Silicon Power Transistors
MJL21193G ONSEMI

获取价格

 		16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21194 ISC

获取价格

 		isc Silicon NPN Power Transistor
MJL21194 MOTOROLA

获取价格

 		16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
MJL21194 ONSEMI

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS

与MJL16218相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证