JDV2S05FS

更新时间： 2024-10-30 03:21:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	112K
描述
Silicon Epitaxial Planar Type VCO for the UHF band

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中文翻译

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数据手册

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JDV2S05FS 数据手册

JDV2S05FS

TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S05FS

VCO for the UHF band

Unit: mm

•

High capacitance ratio: C /C = 1.9 (typ.)

1V 4V

0.6±0.05

Low series resistance: r = 0.3 Ω (typ.)

This device is suitable for use in a small-size tuner.

Absolute Maximum Ratings (Ta = 25°C)

0.2

±0.05

0.1±0.05

Characteristic

Reverse voltage

Symbol

Rating

Unit

0.07

150

Junction temperature

°C

+0.02

0.48

-0.03

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

fSC

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1L1A

Weight: 0.0006 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristic

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

= 10 V

= 1 V, f = 1 MHz

= 4 V, f = 1 MHz

⎯

3.85

1.94

1.7

⎯

4.55

2.48

⎯

Capacitance

⎯

Capacitance ratio

Series resistance

1V 4V

1.9

0.3

⎯

= 1 V, f = 470 MHz

0.5

Note: Signal level when capacitance is measured: V = 100 mVrms

sig

Marking

2007-11-01

12 3

中文翻译

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