型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS2N6804 | MICROSEMI |
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Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
JANS2N6806 | MICROSEMI |
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Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
JANS2N6845 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 4A I(D) | TO-205AF | |
JANS2N6849 | INFINEON |
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POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | |
JANS2N6849 | MICROSEMI |
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Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met | |
JANS2N6849U | MICROSEMI |
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Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, M | |
JANS2N6849U | INFINEON |
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-100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANS2N6849U with Hermetic | |
JANS2N6851 | INFINEON |
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HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | |
JANS2N6851U | ETC |
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-200V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package | |
JANS2N6987 | MICROSEMI |
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Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass |