JANS2N6849

更新时间： 2024-02-04 16:44:18

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	135K
描述
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JANS2N6849 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.66	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	6.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	25 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

JANS2N6849 数据手册

PD - 90550D

IRFF9130

JANTX2N6849

JANTXV2N6849

JANS2N6849

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET TRANSISTORS

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/564

100V, P-CHANNEL

Product Summary

Part Number BVDSS RDS(on)

IRFF9130 -100V 0.30Ω

-6.5A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

TO-39

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C

Continuous Drain Current

-6.5

-4.1

-25

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.20

±20

Gate-to-SourceVoltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

dv/dt

-5.5

-55 to 150

V/ns

STG

StorageTemperature Range

^oC

LeadTemperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

For footnotes refer to the last page

www.irf.com

04/20/01

12 3 4 5 6 7

中文翻译

下载PDF

JANS2N6849 替代型号

型号	品牌	替代类型	描述	数据表
2N6849	INFINEON	完全替代	-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6849 with Hermetic Packag
JANTXV2N6849	INFINEON	完全替代	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
JANTX2N6849	INFINEON	完全替代	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

与JANS2N6849相关器件

型号	品牌	获取价格	描述	数据表
JANS2N6849U	MICROSEMI	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, M
JANS2N6849U	INFINEON	获取价格	-100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANS2N6849U with Hermetic
JANS2N6851	INFINEON	获取价格	HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
JANS2N6851U	ETC	获取价格	-200V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package
JANS2N6987	MICROSEMI	获取价格	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass
JANS2N6987/TR	MICROSEMI	获取价格	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass
JANS2N6987U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, LCC-20
JANS2N6988	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, FP-14
JANS2N6989	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| INDEPENDENT \| 50V V(BR)CEO \| 800MA I(C) \| TO-116
JANS2N6989U	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| INDEPENDENT \| 50V V(BR)CEO \| 800MA I(C) \| TO-116

与JANS2N6849相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

10
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

10
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

12
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

15

产品中心

服务支持

精选活动

关于我们

帮助中心

JANS2N6849

JANS2N6849 技术参数

JANS2N6849 数据手册

JANS2N6849 替代型号

与JANS2N6849相关器件

与JANS2N6849相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANS2N6849

JANS2N6849 技术参数

JANS2N6849 数据手册

JANS2N6849 替代型号

与JANS2N6849相关器件

与JANS2N6849相关文章

您还可以找

您在本页遇到什么问题？