型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS2N7225 | MICROSEMI |
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Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Me | |
JANS2N7227 | MICROSEMI |
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Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Me | |
JANS2N7228 | MICROSEMI |
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Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Me | |
JANS2N7236 | INFINEON |
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POWER MOSFET THRU-HOLE (TO-254AA) | |
JANS2N7236D | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Met | |
JANS2N7236U | INFINEON |
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POWER MOSFET SURFACE MOUNT (SMD-1) | |
JANS2N7237 | INFINEON |
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POWER MOSFET THRU-HOLE (TO-254AA) | |
JANS2N7237D | INFINEON |
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Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Met | |
JANS2N7237U | INFINEON |
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-200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANS2N7237U with Hermetic Pack | |
JANS2N7372 | MICROSEMI |
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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, |