JANTXV2N6849

更新时间： 2024-11-03 23:01:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	135K
描述
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

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JANTXV2N6849 数据手册

PD - 90550D

IRFF9130

JANTX2N6849

JANTXV2N6849

JANS2N6849

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET TRANSISTORS

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/564

100V, P-CHANNEL

Product Summary

Part Number BVDSS RDS(on)

IRFF9130 -100V 0.30Ω

-6.5A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

TO-39

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C

Continuous Drain Current

-6.5

-4.1

-25

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.20

±20

Gate-to-SourceVoltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

dv/dt

-5.5

-55 to 150

V/ns

STG

StorageTemperature Range

^oC

LeadTemperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

For footnotes refer to the last page

www.irf.com

04/20/01

12 3 4 5 6 7

中文翻译

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JANTXV2N6849 替代型号

型号	品牌	替代类型	描述	数据表
JANS2N6849	INFINEON	完全替代	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
2N6849	INFINEON	类似代替	-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6849 with Hermetic Packag

与JANTXV2N6849相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N6849U	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
JANTXV2N6851	INFINEON	获取价格	POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A)
JANTXV2N6851U	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
JANTXV2N6896	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-204AA
JANTXV2N6898	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-204AE
JANTXV2N6902	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 12A I(D) \| TO-204AA
JANTXV2N6904	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-204AA
JANTXV2N6968	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,7.5A I(D),TO-213AA
JANTXV2N6987	MICROSEMI	获取价格	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,
JANTXV2N6987U	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| INDEPENDENT \| 60V V(BR)CEO \| 600MA I(C) \| LLCC

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