Datasheet > JANTXV2N6902

JANTXV2N6902

更新时间： 2024-11-25 00:00:03

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页数	文件大小	规格书
24页	160K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 12A I(D) \| TO-204AA

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JANTXV2N6902 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 26 March 1998.

INCH-POUND

MIL-PRF-19500/556F

24 December 1997

SUPERSEDING

MIL-S-19500/556E

9 December 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power

transistor. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two

levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 [similar to TO-205AF (formerly TO-39)], figure 3 (LCC), and figures 4 and 5 for JANHC and

JANKC die dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25 C.

Type

T and

= +25 C

= +100 C

STG

V dc

A dc

A(pk)

2N6782

2N6784

2N6786

0.8

100

200

400

100

200

400

3.50

2.25

1.25

2.25

1.50

0.80

3.50

2.25

1.25

14.0

9.0

5.5

-55 to +150

1/ Derate linearly 0.12 W/ C for T > +25 C.

- T

J max C

P_T=

T_{J( max )}T_C

x ( at

T_{J( max )}

I _D

(

R_θJX)

R_DS(on)

3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...24

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与JANTXV2N6902相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N6904	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-204AA
JANTXV2N6968	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,7.5A I(D),TO-213AA
JANTXV2N6987	MICROSEMI	获取价格	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,
JANTXV2N6987U	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| INDEPENDENT \| 60V V(BR)CEO \| 600MA I(C) \| LLCC
JANTXV2N6988	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 4-Element, PNP, Silicon, TO-86,
JANTXV2N6988	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, CERAMIC
JANTXV2N6989	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 4-Element, NPN, Silicon, TO-116,
JANTXV2N6989U		获取价格	Surface Mount Quad NPN Transistor
JANTXV2N6990	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| INDEPENDENT \| 50V V(BR)CEO \| 800MA I(C) \| FP
JANTXV2N6990U	ETC	获取价格	BJT

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