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JANTXV2N7221UPBF

更新时间： 2024-09-24 09:03:27
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
7页 220K
描述
Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

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JANTXV2N7221UPBF 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
风险等级：5.69Is Samacsys：N
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：650 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：400 V最大漏极电流 (ID)：10 A
最大漏源导通电阻：0.7 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：40 A
参考标准：MIL-19500表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

JANTXV2N7221UPBF 数据手册

 浏览型号JANTXV2N7221UPBF的Datasheet PDF文件第2页浏览型号JANTXV2N7221UPBF的Datasheet PDF文件第3页浏览型号JANTXV2N7221UPBF的Datasheet PDF文件第4页浏览型号JANTXV2N7221UPBF的Datasheet PDF文件第5页浏览型号JANTXV2N7221UPBF的Datasheet PDF文件第6页浏览型号JANTXV2N7221UPBF的Datasheet PDF文件第7页 
PD-91550D  
IRFN340  
JANTX2N7221U  
JANTXV2N7221U  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
REF:MIL-PRF-19500/596  
400V, N-CHANNEL  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFN340  
0.55 Ω  
10A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
SMD-1  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Surface Mount  
Dynamic dv/dt Rating  
n Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
10  
D
D
GS  
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
6.0  
40  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
125  
W
W/°C  
V
D
C
1.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
650  
mJ  
A
AS  
I
10  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
12.5  
4.0  
mJ  
V/ns  
AR  
dv/dt  
T
-55 to 150  
J
T
Storage Temperature Range  
Package Mounting Surface Temperature  
Weight  
°C  
g
STG  
300(for 5 seconds)  
2.6 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
03/10/11  
1234567

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