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JANTXV2N7221

更新时间： 2024-11-19 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 1113K
描述
400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A JANTXV2N7221 with Hermetic Packaging

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中文翻译

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JANTXV2N7221 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：TO-254AA, 3 PINReach Compliance Code：compliant
风险等级：5.14其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：650 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：400 V
最大漏极电流 (Abs) (ID)：10 A最大漏极电流 (ID)：10 A
最大漏源导通电阻：0.7 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-254AAJESD-30 代码：S-MSFM-P3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：125 W最大脉冲漏极电流 (IDM)：40 A
认证状态：Qualified参考标准：MIL-19500/596
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANTXV2N7221 数据手册

 浏览型号JANTXV2N7221的Datasheet PDF文件第2页浏览型号JANTXV2N7221的Datasheet PDF文件第3页浏览型号JANTXV2N7221的Datasheet PDF文件第4页浏览型号JANTXV2N7221的Datasheet PDF文件第5页浏览型号JANTXV2N7221的Datasheet PDF文件第6页浏览型号JANTXV2N7221的Datasheet PDF文件第7页 
PD-90490F  
IRFM340  
JANTX2N7221  
JANTXV2N7221  
400V, N-CHANNEL  
REF: MIL-PRF-19500/596  
HEXFET MOSFET TECHNOLOGY  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFM340  
10A  
0.55  
Description  
TO-254AA  
HEXFET MOSFET technology is the key to IR HiRel  
advanced line of power MOSFET transistors. The efficient  
geometry design achieves very low on-state resistance  
combined with high trans conductance. HEXFET transistors  
also feature all of the well-established advantages of  
MOSFETs, such as voltage control, very fast switching,  
ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as  
switching power supplies, motor controls, inverters,  
choppers, audio amplifiers, high energy pulse circuits, and  
virtually any application where high reliability is required.  
The HEXFET transistor’s totally isolated package  
eliminates the need for additional isolating material  
between the device and the heat sink. This improves  
thermal efficiency and reduces drain capacitance.  
Features  
Simple Drive Requirements  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light Weight  
ESD Rating: Class 2 per MIL-STD-750, Method 1020  
Absolute Maximum Ratings  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current  
10  
A
6.0  
40  
IDM @TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current   
W
W/°C  
V
Maximum Power Dissipation  
125  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
1.0  
VGS  
EAS  
IAR  
± 20  
650  
mJ  
A
10  
mJ  
EAR  
dv/dt  
TJ  
12.5  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
V/ns  
4.0  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
9.3 (Typical)  
Weight  
For Footnotes refer to the page 2.  
1
2021-04-30  
International Rectifier HiRel Products, Inc.  
1234567

中文翻译

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